IRS2509SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Max Power Dissipation :

625mW

Operating Temperature :

-40°C~150°C TJ

Gate Type :

IGBT, N-Channel MOSFET

Output Current :

200mA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Nominal Supply Current :

2mA

RoHS Status :

RoHS Compliant

Supply Voltage :

15V

Base Part Number :

IRS2509SPBF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

High Side Voltage - Max (Bootstrap) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

150ns

Height Seated (Max) :

1.75mm

Turn On Time :

1.1 μs

Current - Peak Output (Source, Sink) :

200mA 350mA

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Turn Off Time :

0.4 μs

Number of Drivers :

2

Driven Configuration :

Half-Bridge

Logic Voltage - VIL, VIH :

0.8V 2.2V

Fall Time (Typ) :

50 ns

Number of Terminations :

8

ECCN Code :

EAR99

Terminal Position :

Dual

Length :

4.9mm

Turn-Off Delay Time :

250 ns

Output Voltage :

20V

Voltage - Supply :

10V~20V

Number of Functions :

1

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Turn On Delay Time :

750 ns

Number of Pins :

8

Rise / Fall Time (Typ) :

150ns 50ns

Terminal Form :

Gull wing

Max Output Current :

200mA

Channel Type :

SYNCHRONOUS

Published :

1996

Packaging :

Tube

Built-in Protections :

TRANSIENT; OVER CURRENT; UNDER VOLTAGE

Width :

3.9mm

Input Type :

Non-Inverting