IRS2330DJPBF
- Mfr.Part #
- IRS2330DJPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 44-LCC (J-Lead), 32 Leads
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 44PLCC
- Stock
- 9,861
- In Stock :
- 9,861
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Operating Temperature :
- -40°C~150°C TJ
- Number of Drivers :
- 6
- Number of Terminations :
- 44
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- High Side Voltage - Max (Bootstrap) :
- 600V
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Position :
- QUAD
- Number of Outputs :
- 1
- Number of Pins :
- 44
- Rise / Fall Time (Typ) :
- 80ns 35ns
- RoHS Status :
- RoHS Compliant
- Output Voltage :
- 620V
- Turn On Delay Time :
- 50 ns
- Turn Off Time :
- 0.7 µs
- Published :
- 1996
- Max Power Dissipation :
- 2W
- Packaging :
- Tube
- Package / Case :
- 44-LCC (J-Lead), 32 Leads
- Length :
- 16.66mm
- Base Part Number :
- IRS2330DJPBF
- ECCN Code :
- EAR99
- Number of Functions :
- 1
- Driven Configuration :
- Half-Bridge
- Height :
- 3.59mm
- Fall Time (Typ) :
- 55 ns
- Mount :
- Surface Mount
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Width :
- 16.66mm
- High Side Driver :
- yes
- Voltage - Supply :
- 10V~20V
- Output Current :
- 200mA
- Turn-Off Delay Time :
- 500 ns
- Mounting Type :
- Surface Mount
- Max Output Current :
- 500mA
- Turn On Time :
- 0.7 µs
- Channel Type :
- 3-Phase
- Supply Voltage :
- 15V
- Power Dissipation :
- 2W
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Gate Type :
- IGBT, N-Channel MOSFET
- Input Type :
- Inverting
- Propagation Delay :
- 700 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- J BEND
- REACH SVHC :
- No SVHC
- Rise Time :
- 125ns
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Datasheets
- IRS2330DJPBF

Gate Drivers Infineon Technologies IRS2330DJPBF Overview
The IRS2330DJPBF by Infineon Technologies represents a pinnacle in the design and functionality of gate drivers, tailored for efficient, high-performance half-bridge applications. This IC gate driver is encapsulated in a 44PLCC package, ensuring robust performance and reliability. Designed to drive high- and low-side power MOSFETs and IGBTs, this gate driver IC enables designers to optimize their systems for higher speeds and reduced power consumption, making it ideal for a broad range of industrial applications. The utilization of the Gate Drivers Infineon Technologies IRS2330DJPBF in your designs guarantees improvements in efficiency and performance, catering to high-demand environments.
IRS2330DJPBF Features
This gate driver IC excels in delivering precision and reliability with features such as integrated bootstrap diodes, dead-time control, and under-voltage lockout protection. Its advanced circuitry is designed to minimize propagation delays and shoot-through, enhancing overall system safety and efficiency.
IRS2330DJPBF Applications
- Electric Vehicles: Facilitates the management of power in electric vehicle drivetrains by efficiently driving the power modules that control motor speeds.
- Solar Inverters: Used in the power stages of solar inverters to enhance energy conversion efficiency from DC to AC, ensuring stable and reliable power output.
- UPS Systems: Critical in uninterruptible power supplies, enhancing the reliability and efficiency of power switching functions essential for backup power solutions.
- Industrial Motor Drives: Enhances performance in industrial motor control by ensuring precise gate switching, leading to improved motor efficiency and reduced heat generation.
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