IRS21851SPBF
- Mfr.Part #
- IRS21851SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HIGH-SIDE 8SOIC
- Stock
- 15,282
- In Stock :
- 15,282
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Fall Time (Typ) :
- 40 ns
- Nominal Supply Current :
- 240μA
- Max Power Dissipation :
- 1.25W
- Release Time :
- 160 ns
- High Side Voltage - Max (Bootstrap) :
- 600V
- Built-in Protections :
- TRANSIENT; UNDER VOLTAGE
- REACH SVHC :
- No SVHC
- Rise / Fall Time (Typ) :
- 15ns 15ns
- Max Supply Current :
- 240μA
- Packaging :
- Tube
- Output Peak Current Limit-Nom :
- 4A
- Number of Functions :
- 1
- Base Part Number :
- IRS21851SPBF
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Width :
- 4mm
- Current - Peak Output (Source, Sink) :
- 4A 4A
- Mount :
- Surface Mount
- Voltage - Supply :
- 10V~20V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Drivers :
- 1
- Lead Free :
- Lead Free
- Input Type :
- Non-Inverting
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Output Voltage :
- 620V
- Max Output Current :
- 4A
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Output Current :
- 4A
- Supply Voltage :
- 15V
- RoHS Status :
- RoHS Compliant
- Height :
- 1.4986mm
- Logic Voltage - VIL, VIH :
- 0.8V 2.5V
- Interface IC Type :
- BUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Channel Type :
- Single
- Turn On Delay Time :
- 210 ns
- Power Dissipation :
- 1.25W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Length :
- 4.9784mm
- Gate Type :
- IGBT, N-Channel MOSFET
- Propagation Delay :
- 210 ns
- Published :
- 1996
- Rise Time :
- 40ns
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 8
- Driven Configuration :
- High-Side
- Datasheets
- IRS21851SPBF

Gate Drivers Infineon Technologies IRS21851SPBF Overview
The IRS21851SPBF by Infineon Technologies stands out as a high-side gate driver specifically designed to enhance the efficiency and reliability of your power management systems. This IC, housed in an 8SOIC package, serves as a pivotal component in driving MOSFETs and IGBTs, ensuring that switching operations are both swift and smooth. With its robust design tailored for high-side gate driving, the IRS21851SPBF mitigates the risk of cross-conduction and increases overall system robustness, making it an ideal choice for demanding applications. This product exemplifies Infineon's commitment to providing advanced solutions that meet the critical needs of modern electronic systems.
IRS21851SPBF Features
The IRS21851SPBF gate driver includes multiple features designed to optimize performance and safety in high-voltage applications. Key features include under-voltage lockout for both high-side and low-side drivers, matched propagation delays for both channels, and integrated dead-time protection. These functionalities ensure reliable operation under varying electrical conditions, thereby enhancing the durability and functionality of end applications.
IRS21851SPBF Applications
- Solar Inverters: The IRS21851SPBF is used in solar inverters to efficiently manage power conversion, enabling more effective use of solar energy by providing reliable and fast switching of power devices.
- Motor Drives: In motor drive applications, this IC facilitates precise control over high-side switching, essential for achieving the desired motor performance and efficiency.
- Power Supply Units: Ensuring stability and efficiency, the IRS21851SPBF plays a critical role in the power stages of high-performance power supplies, handling high voltages and currents with ease.
- Electric Vehicles: Its robustness and efficiency make the IRS21851SPBF suitable for electric vehicle power management systems, where reliable high-side driving is crucial for vehicle performance and safety.
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