IRS21281SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Base Part Number :

IRS21281SPBF

Max Power Dissipation :

625mW

High Side Voltage - Max (Bootstrap) :

600V

Number of Pins :

8

Rise Time :

130ns

Driven Configuration :

High-Side

Height :

1.4986mm

Max Supply Current :

120μA

RoHS Status :

RoHS Compliant

Supply Voltage :

15V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Resistance :

125Ohm

Gate Type :

IGBT, N-Channel MOSFET

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Surface Mount

Logic Voltage - VIL, VIH :

0.8V 2.5V

Turn-Off Delay Time :

40 ns

Turn On Delay Time :

80 ns

ECCN Code :

EAR99

Terminal Position :

Dual

Power Dissipation :

625mW

Rise / Fall Time (Typ) :

80ns 40ns

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

65 ns

High Side Driver :

yes

Propagation Delay :

200 ns

Lead Free :

Lead Free

Mount :

Surface Mount

Number of Functions :

1

Voltage - Supply :

9V~20V

Nominal Supply Current :

60μA

Channel Type :

Single

Radiation Hardening :

No

Turn On Time :

0.2 μs

Input Type :

Inverting

Turn Off Time :

0.2 μs

Length :

4.9784mm

Max Output Current :

600mA

Output Voltage :

20V

Number of Drivers :

1

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Packaging :

Tube

REACH SVHC :

No SVHC

Width :

3.9878mm

Output Current :

290mA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

1996

Current - Peak Output (Source, Sink) :

290mA 600mA

Number of Terminations :

8

Output Peak Current Limit-Nom :

0.6A

JESD-609 Code :

e3