IRS2118SPBF

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Mfr.Part #
IRS2118SPBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC GATE DRVR HIGH-SIDE 8SOIC
Stock
4,284
In Stock :
4,284

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Manufacturer :
Infineon Technologies
Product Category :
Gate Drivers
Power Dissipation :
625mW
Rise / Fall Time (Typ) :
75ns 35ns
Gate Type :
IGBT, N-Channel MOSFET
Operating Temperature :
-40°C~150°C TJ
Output Current :
290mA
Output Voltage :
620V
Built-in Protections :
TRANSIENT; UNDER VOLTAGE
Rise Time :
130ns
Number of Pins :
8
Packaging :
Tube
Channel Type :
Single
Base Part Number :
IRS2118SPBF
Supply Voltage :
15V
Turn-Off Delay Time :
105 ns
REACH SVHC :
No SVHC
Terminal Position :
Dual
Voltage - Supply :
10V~20V
Fall Time (Typ) :
65 ns
Mounting Type :
Surface Mount
Number of Outputs :
1
Release Time :
105 ns
Number of Terminations :
8
Length :
4.9784mm
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Lead Free :
Lead Free
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Logic Voltage - VIL, VIH :
6V 9.5V
JESD-609 Code :
e3
Width :
3.9878mm
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
2 (1 Year)
Height :
1.4986mm
Number of Functions :
1
Mount :
Surface Mount
Max Power Dissipation :
625mW
Interface IC Type :
BUFFER OR INVERTER BASED PERIPHERAL DRIVER
Terminal Form :
Gull wing
Max Output Current :
600mA
Factory Lead Time :
12 Weeks
Input Type :
Inverting
Current - Peak Output (Source, Sink) :
290mA 600mA
Propagation Delay :
200 ns
Nominal Supply Current :
340µA
Turn On Delay Time :
125 ns
Published :
1996
Turn On Time :
0.2 μs
Max Supply Current :
340µA
Driven Configuration :
High-Side
ECCN Code :
EAR99
High Side Voltage - Max (Bootstrap) :
600V
RoHS Status :
ROHS3 Compliant
Datasheets
IRS2118SPBF
Introducing Gate Drivers Infineon Technologies IRS2118SPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Number of Pins:8, Base Part Number:IRS2118SPBF, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), IRS2118SPBF pinout, IRS2118SPBF datasheet PDF, IRS2118SPBF amp .Beyond Gate Drivers Infineon Technologies IRS2118SPBF ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRS2118SPBF


Gate Drivers Infineon Technologies IRS2118SPBF Overview

The Infineon IRS2118SPBF is a sophisticated high-side gate driver designed to meet the demanding requirements of modern electronic applications. As part of Infineon Technologies' renowned lineup of Gate Drivers, the IRS2118SPBF ensures reliable performance in driving MOSFETs and IGBTs. This component is crafted to provide efficient switching with a compact 8SOIC package, making it ideal for designs where space and power management are critical. The integration of this gate driver into your systems guarantees improved operational efficiency and durability, crucial for bulk B2B purchases and industrial application deployment.

IRS2118SPBF Features

This gate driver offers several key features that enhance its utility and performance in various applications. These include under-voltage lockout for both channels, matched propagation delay for both channels, and a 600V max offset voltage. Additionally, the IRS2118SPBF is equipped with robust protection features such as desaturation detection and active shutdown functionality, ensuring safe operation under fault conditions.

IRS2118SPBF Applications

  • Motor Control Systems: Utilizes its high-side driver capabilities to enhance the reliability and efficiency of motor control circuits.
  • Power Supplies: Improves the efficiency and reliability of switch-mode power supplies through effective gate driving.
  • Solar Inverters: Critical in managing power transistors effectively, ensuring efficient energy conversion and reliability in solar applications.
  • Electric Vehicle (EV) Chargers: Supports the high demands of EV charging systems with robust and reliable gate driving to handle high voltages and currents.
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