IRS2117SPBF
- Mfr.Part #
- IRS2117SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HIGH-SIDE 8SOIC
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Terminal Position :
- Dual
- Max Power Dissipation :
- 625mW
- Base Part Number :
- IRS2117SPBF
- JESD-609 Code :
- e3
- Release Time :
- 105 ns
- Number of Terminations :
- 8
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Interface IC Type :
- BUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Turn-Off Delay Time :
- 105 ns
- Turn On Time :
- 0.2 μs
- Mounting Type :
- Surface Mount
- Logic Voltage - VIL, VIH :
- 6V 9.5V
- Voltage - Supply :
- 10V~20V
- Gate Type :
- IGBT, N-Channel MOSFET
- Turn On Delay Time :
- 125 ns
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- Driven Configuration :
- High-Side
- REACH SVHC :
- No SVHC
- Output Voltage :
- 620V
- Length :
- 4.9784mm
- Built-in Protections :
- TRANSIENT; UNDER VOLTAGE
- Nominal Supply Current :
- 340µA
- Radiation Hardening :
- No
- Supply Voltage :
- 15V
- Height :
- 1.4986mm
- Fall Time (Typ) :
- 65 ns
- Lead Free :
- Lead Free
- Input Type :
- Non-Inverting
- Output Current :
- 290mA
- Max Output Current :
- 600mA
- Rise / Fall Time (Typ) :
- 75ns 35ns
- RoHS Status :
- ROHS3 Compliant
- Number of Outputs :
- 1
- Published :
- 1996
- Rise Time :
- 130ns
- Propagation Delay :
- 200 ns
- ECCN Code :
- EAR99
- Power Dissipation :
- 625mW
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Functions :
- 1
- Factory Lead Time :
- 12 Weeks
- Current - Peak Output (Source, Sink) :
- 290mA 600mA
- Terminal Form :
- Gull wing
- Width :
- 3.9878mm
- High Side Voltage - Max (Bootstrap) :
- 600V
- Channel Type :
- Single
- Max Supply Current :
- 340µA
- Operating Temperature :
- -40°C~150°C TJ
- Datasheets
- IRS2117SPBF

Gate Drivers Infineon Technologies IRS2117SPBF Overview
The IRS2117SPBF by Infineon Technologies is a robust gate driver specifically designed for high-side MOSFET and IGBT driving, making it an essential component in sophisticated electronic assemblies. Ensuring efficient and reliable operation, this IC enhances system performance by providing stable, precise control over power switching devices. Its compact 8SOIC package allows seamless integration into space-constrained applications, while advanced protective features guard against operational hazards, promoting longevity and robustness in demanding environments. The strategic use of the Gate Drivers Infineon Technologies IRS2117SPBF in your designs can lead to enhanced efficiency, reliability, and performance metrics crucial for high-volume B2B procurement.
IRS2117SPBF Features
This gate driver IC boasts an array of features designed to optimize electronic system performance, including under-voltage lockout for both channels, matched propagation delay for both channels, and a 3.3V to 20V input logic compatible. Additionally, its integrated desaturation detection and fault reporting functionalities ensure enhanced operational safety and reliability, crucial for managing high-voltage applications.
IRS2117SPBF Applications
- Motor Drive Controllers: Utilizes high-side gate drive capability to enhance the reliability and efficiency of motor control circuits in industrial automation and automotive systems.
- Switch Mode Power Supplies (SMPS): Employs in driving MOSFETs and IGBTs to improve power efficiency and thermal performance in compact power supply units.
- Renewable Energy Systems: Facilitates efficient power management and switching in solar inverters and wind turbine converters, crucial for maximizing energy conversion and reducing wastage.
- High-Efficiency Inverters: Optimizes switching activities in high-voltage inverters used in electric vehicles and energy storage systems, ensuring robust performance under varying load conditions.
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