IRS2111STRPBF
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- Mfr.Part #
- IRS2111STRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 2,279
- In Stock ：
- 2,279
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Number of Functions :
- 1
- Output Current :
- 200mA
- Turn On Time :
- 0.95 μs
- Max Output Current :
- 600mA
- Current - Peak Output (Source, Sink) :
- 290mA 600mA
- Number of Terminations :
- 8
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Gate Type :
- IGBT, N-Channel MOSFET
- Power Supplies :
- 15V
- Driven Configuration :
- Half-Bridge
- Turn-Off Delay Time :
- 150 ns
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Rise Time :
- 130ns
- Rise / Fall Time (Typ) :
- 75ns 35ns
- Base Part Number :
- IRS2111SPBF
- Fall Time (Typ) :
- 65 ns
- Height :
- 1.4986mm
- Propagation Delay :
- 950 ns
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Number of Drivers :
- 2
- Input Type :
- Inverting, Non-Inverting
- Channel Type :
- SYNCHRONOUS
- Lead Free :
- Lead Free
- Factory Lead Time :
- 12 Weeks
- Turn On Delay Time :
- 750 ns
- Published :
- 1996
- Nominal Supply Current :
- 180μA
- Logic Voltage - VIL, VIH :
- 8.3V 12.6V
- Voltage - Supply :
- 10V~20V
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 8
- Built-in Protections :
- TRANSIENT; UNDER VOLTAGE
- Terminal Form :
- Gull wing
- Length :
- 4.9784mm
- High Side Voltage - Max (Bootstrap) :
- 600V
- Power Dissipation :
- 625mW
- Max Supply Current :
- 180μA
- Width :
- 3.9878mm
- Terminal Position :
- Dual
- Supply Voltage :
- 15V
- Operating Temperature :
- -40°C~150°C TJ
- Output Voltage :
- 10V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRS2111STRPBF
Gate Drivers Infineon Technologies IRS2111STRPBF Overview
Introducing the IRS2111STRPBF from Infineon Technologies, a state-of-the-art half-bridge gate driver designed to enhance the performance and reliability of your high-efficiency applications. This robust component is housed in an 8SOIC package, offering optimal functionality while minimizing space requirements. The IRS2111STRPBF is engineered to drive both N-channel MOSFETs and IGBTs, making it an indispensable tool for developers aiming to optimize their power management systems. Its integrated circuits ensure precise control and protection, thus facilitating improved power conversion efficiencies and robust operation in demanding environments.
IRS2111STRPBF Features
The IRS2111STRPBF includes several key features that make it an exceptional choice for critical applications. It provides a floating channel designed for bootstrap operation as high as 600V, which is perfect for working with high-side gate drive circuits. Additionally, the device includes under-voltage lockout for both channels and a 3.3V and 5V input logic compatible. Its robust design enables it to withstand negative transient voltage and dV/dt immunity, making the IRS2111STRPBF reliable in the most challenging conditions.
IRS2111STRPBF Applications
- DC-AC Inverters: Used in converting DC to AC power, ensuring efficient gate driving for MOSFETs and IGBTs in renewable energy applications like solar inverters.
- Motor Control: Provides robust gate drive solutions, essential for the precise control required in electric vehicle drivetrains and industrial automation.
- Switch Mode Power Supplies (SMPS): Enhances efficiency and reliability in power supplies for computers, servers, and telecommunications equipment by driving half-bridge configurations effectively.
- Inductive Cooking: Delivers reliable and precise driving of high-power transistors needed for inductive heating technology in modern cooking appliances.
- UPS Systems: Critical for the control of power semiconductor devices used in Uninterruptible Power Supplies, ensuring seamless power backup and protection against power surges.
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