IRS2108SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Number of Terminations :

8

Turn On Time :

0.3 µs

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Gate Type :

IGBT, N-Channel MOSFET

Turn-Off Delay Time :

30 ns

Channel Type :

Independent

Voltage - Supply :

10V~20V

Radiation Hardening :

No

Lead Free :

Lead Free

Output Voltage :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Propagation Delay :

300 ns

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Height :

1.4986mm

Turn On Delay Time :

30 ns

Base Part Number :

IRS2108SPBF

Power Dissipation :

625mW

Max Supply Current :

1.6mA

Logic Voltage - VIL, VIH :

0.8V 2.5V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

High Side Voltage - Max (Bootstrap) :

600V

Operating Temperature :

-40°C~150°C TJ

Length :

4.9784mm

Driven Configuration :

Half-Bridge

Number of Functions :

1

Packaging :

Tube

Factory Lead Time :

12 Weeks

Power Supplies :

15V

Nominal Supply Current :

1mA

REACH SVHC :

No SVHC

Fall Time (Typ) :

35 ns

Width :

3.9878mm

Supply Voltage :

15V

ECCN Code :

EAR99

Current - Peak Output (Source, Sink) :

290mA 600mA

Terminal Position :

Dual

Rise / Fall Time (Typ) :

100ns 35ns

Built-in Protections :

TRANSIENT; UNDER VOLTAGE

Max Output Current :

600mA

Mounting Type :

Surface Mount

Release Time :

200 ns

Max Power Dissipation :

625mW

Mount :

Surface Mount

Output Current :

290mA

Published :

1996

Terminal Form :

Gull wing

Input Type :

Inverting, Non-Inverting

Rise Time :

220ns

Number of Outputs :

2

Number of Pins :

8