IRS2104STRPBF
- Mfr.Part #
- IRS2104STRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 15,692
- In Stock :
- 15,692
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Base Part Number :
- IRS2104SPBF
- Number of Terminations :
- 8
- Current - Peak Output (Source, Sink) :
- 290mA 600mA
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.4986mm
- Lead Free :
- Lead Free
- Rise Time :
- 70ns
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 60 ns
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Operating Temperature :
- -40°C~150°C TJ
- Output Voltage :
- 20V
- Voltage - Supply :
- 10V~20V
- Built-in Protections :
- TRANSIENT; UNDER VOLTAGE
- Length :
- 4.9784mm
- Width :
- 3.9878mm
- Driven Configuration :
- Half-Bridge
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 625mW
- Fall Time (Typ) :
- 35 ns
- Max Output Current :
- 600mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Nominal Supply Current :
- 150μA
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Logic Voltage - VIL, VIH :
- 0.8V 2.5V
- Power Dissipation :
- 625mW
- Power Supplies :
- 15V
- Number of Functions :
- 1
- Turn-Off Delay Time :
- 150 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Channel Type :
- SYNCHRONOUS
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Terminal Form :
- Gull wing
- High Side Voltage - Max (Bootstrap) :
- 600V
- Rise / Fall Time (Typ) :
- 70ns 35ns
- Input Type :
- Non-Inverting
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Propagation Delay :
- 820 ns
- Gate Type :
- IGBT, N-Channel MOSFET
- Number of Drivers :
- 2
- Output Current :
- 290mA
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Supply Voltage :
- 15V
- Max Supply Current :
- 270μA
- Published :
- 1996
- Datasheets
- IRS2104STRPBF

[Gate Drivers Infineon Technologies IRS2104STRPBF] Overview
Introducing the cutting-edge Gate Driver, IRS2104STRPBF, meticulously crafted by Infineon Technologies. Designed to meet the demands of modern electronic systems, this integrated circuit stands as a beacon of innovation in the realm of power management. With its robust architecture and advanced features, it empowers engineers and designers to optimize performance and efficiency in their applications.
Infineon Technologies, renowned for its excellence in semiconductor solutions, has once again raised the bar with the IRS2104STRPBF. This half-bridge gate driver, housed in a compact 8SOIC package, delivers unparalleled precision and reliability, making it the preferred choice for discerning professionals.
Whether you're delving into industrial automation, renewable energy systems, or automotive electronics, this gate driver promises to elevate your projects to new heights of success. Let's explore the features and capabilities that set the IRS2104STRPBF apart from the rest.
IRS2104STRPBF Features
- Integrated Half-Bridge Gate Driver
- Compact 8SOIC Package
- Precision Control and Monitoring
- High Efficiency and Reliability
- Optimized Power Management
- Wide Operating Voltage Range
- Overcurrent and Overtemperature Protection
- Enhanced EMI Performance
IRS2104STRPBF Applications
- Industrial Automation: The IRS2104STRPBF finds its place in industrial motor drives, enabling precise control and efficient operation of machinery and equipment. Its robust design ensures reliable performance in demanding environments, contributing to increased productivity and reduced downtime.
- Renewable Energy Systems: In solar inverters and wind turbine generators, this gate driver facilitates seamless power conversion and management. With its advanced features for monitoring and protection, it ensures the optimal utilization of renewable energy sources, promoting sustainability and eco-friendliness.
- Automotive Electronics: Automotive applications benefit from the IRS2104STRPBF's high-performance capabilities, particularly in electric and hybrid vehicles. By driving power MOSFETs with precision, it enhances the efficiency of motor control systems, leading to improved fuel economy and reduced emissions.
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