IRS2103STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Gate Type :

IGBT, N-Channel MOSFET

Max Power Dissipation :

625mW

Voltage - Supply :

10V~20V

Built-in Protections :

TRANSIENT; UNDER VOLTAGE

Number of Drivers :

2

Terminal Position :

Dual

Output Current :

130mA

Number of Functions :

1

Number of Pins :

8

Height :

1.4986mm

Published :

1996

Max Supply Current :

270μA

Mount :

Surface Mount

Fall Time (Typ) :

90 ns

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Rise / Fall Time (Typ) :

70ns 35ns

Turn-Off Delay Time :

60 ns

Base Part Number :

IRS2103SPBF

Current - Peak Output (Source, Sink) :

290mA 600mA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Power Dissipation :

625mW

Nominal Supply Current :

270μA

Propagation Delay :

820 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

High Side Voltage - Max (Bootstrap) :

600V

Channel Type :

Independent

Output Voltage :

10V

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Driven Configuration :

Half-Bridge

Power Supplies :

15V

Rise Time :

170ns

Turn On Delay Time :

60 ns

Terminal Form :

Gull wing

Input Type :

Inverting, Non-Inverting

Width :

3.9878mm

Max Output Current :

600mA

Packaging :

Tape and Reel (TR)

Logic Voltage - VIL, VIH :

0.8V 2.5V

Number of Terminations :

8

Operating Temperature :

-40°C~150°C TJ

Supply Voltage :

15V

Radiation Hardening :

No

Lead Free :

Lead Free