IRS2103SPBF
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- Mfr.Part #
- IRS2103SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 108,622
- In Stock ：
- 108,622
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Terminal Form :
- Gull wing
- High Side Voltage - Max (Bootstrap) :
- 600V
- Built-in Protections :
- TRANSIENT; UNDER VOLTAGE
- Max Output Current :
- 600mA
- Base Part Number :
- IRS2103SPBF
- Max Power Dissipation :
- 625mW
- Length :
- 4.9784mm
- Nominal Supply Current :
- 150μA
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Channel Type :
- Independent
- Height :
- 1.4986mm
- Mount :
- Surface Mount
- Power Dissipation :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Power Supplies :
- 15V
- Driven Configuration :
- Half-Bridge
- JESD-609 Code :
- e3
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 70ns
- Output Voltage :
- 20V
- Max Output Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Current - Peak Output (Source, Sink) :
- 290mA 600mA
- Supply Voltage :
- 15V
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Fall Time (Typ) :
- 35 ns
- Published :
- 1996
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- Terminal Position :
- Dual
- Max Supply Current :
- 270μA
- Operating Temperature :
- -40°C~150°C TJ
- Mounting Type :
- Surface Mount
- Input Type :
- Inverting, Non-Inverting
- Output Current :
- 290mA
- Propagation Delay :
- 820 ns
- Width :
- 3.9878mm
- Termination :
- SMD/SMT
- Rise / Fall Time (Typ) :
- 70ns 35ns
- Turn-Off Delay Time :
- 60 ns
- Number of Functions :
- 1
- Voltage - Supply :
- 10V~20V
- Number of Pins :
- 8
- Terminal Finish :
- Matte Tin (Sn)
- Gate Type :
- IGBT, N-Channel MOSFET
- Release Time :
- 150 ns
- Number of Outputs :
- 2
- Logic Voltage - VIL, VIH :
- 0.8V 2.5V
- Packaging :
- Tube
- Turn On Delay Time :
- 60 ns
- Datasheets
- IRS2103SPBF
Gate Drivers Infineon Technologies IRS2103SPBF Overview
The IRS2103SPBF from Infineon Technologies is a highly robust and efficient IC gate driver designed for half-bridge applications. This device is encapsulated in a compact 8SOIC package, offering optimal integration for modern high-density designs. The IRS2103SPBF enhances system performance through its superior gate driving capability and integrated features. It is particularly tailored to meet the demanding requirements of driving power MOSFETs and IGBTs, ensuring reliable operation in a variety of power applications. This Gate Drivers Infineon Technologies IRS2103SPBF is pivotal for developers looking to achieve efficient and reliable designs, making it an excellent choice for high-performance industrial applications.
IRS2103SPBF Features
The IRS2103SPBF gate driver includes several key features that make it stand out. It incorporates a floating channel designed for bootstrap operation, enabling it to drive both N-channel MOSFETs and IGBTs in a half-bridge configuration. The device supports up to 600V, with a 210ns typical propagation delay and a 290ns delay-matching. Furthermore, its dual output drivers ensure balanced and high-speed switching, which is critical for reducing power losses and improving overall efficiency in power conversion systems.
IRS2103SPBF Applications
- Motor Control Systems: In motor drive applications, the IRS2103SPBF is used to efficiently switch the power devices in various motor control architectures, enhancing performance and reliability.
- Switched Mode Power Supplies (SMPS): This gate driver plays a crucial role in managing the switching of power transistors, ensuring efficient power conversion and regulation in SMPS circuits.
- Uninterruptible Power Supplies (UPS): The IRS2103SPBF is essential for the reliable operation of UPS systems, driving the necessary components to provide a continuous power supply during outages.
- Electric Vehicle (EV) Inverters: In EV applications, this device facilitates the efficient conversion of DC to AC power, driving the inverters that are critical for EV operation.
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