IR2301

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Mfr.Part #
IR2301
Manufacturer
Infineon Technologies
Package / Case
8-DIP (0.300, 7.62mm)
Datasheet
Download
Description
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Stock
2,605
In Stock :
2,605

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Manufacturer :
Infineon Technologies
Product Category :
Gate Drivers
Terminal Position :
Dual
Packaging :
Tube
High Side Driver :
yes
RoHS Status :
Non-RoHS Compliant
Published :
1996
Additional Feature :
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
Voltage - Supply :
5V~20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Turn On Time :
0.3 µs
Gate Type :
IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH :
0.8V 2.9V
Length :
9.88mm
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Drivers :
2
Qualification Status :
Not Qualified
Channel Type :
Independent
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
IR2301
Current - Peak Output (Source, Sink) :
200mA 350mA
ECCN Code :
EAR99
Output Peak Current Limit-Nom :
0.35A
Package / Case :
8-DIP (0.300, 7.62mm)
High Side Voltage - Max (Bootstrap) :
600V
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
Number of Terminations :
8
Input Type :
Non-Inverting
Height Seated (Max) :
5.33mm
JESD-30 Code :
R-PDIP-T8
Operating Temperature :
-40°C~150°C TJ
Driven Configuration :
High-Side or Low-Side
Supply Voltage :
15V
Number of Functions :
1
Rise / Fall Time (Typ) :
130ns 50ns
Datasheets
IR2301
Introducing Gate Drivers Infineon Technologies IR2301 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:IR2301, Package / Case:8-DIP (0.300, 7.62mm), Number of Terminations:8, Operating Temperature:-40°C~150°C TJ, IR2301 pinout, IR2301 datasheet PDF, IR2301 amp .Beyond Gate Drivers Infineon Technologies IR2301 ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IR2301


Gate Drivers Infineon Technologies IR2301 Overview

Introducing the robust and efficient IR2301 from Infineon Technologies, a high-performance gate driver specifically designed for sophisticated switching applications. The IR2301 excels in delivering high-speed, reliable gate switching for both high-side and low-side MOSFETs and IGBTs. This component is housed in an 8-pin DIP package, ensuring easy integration into existing circuits without the need for extensive redesign. Ideal for those seeking to enhance system reliability and performance, the Gate Drivers Infineon Technologies IR2301 ensures optimized gate control, reduced switching losses, and improved overall efficiency.

IR2301 Features

The IR2301 gate driver from Infineon Technologies offers numerous features that make it a standout choice for driving MOSFETs and IGBTs. Key features include its ability to operate up to 600V, providing robust performance under high voltage conditions. It features a dual-channel design, allowing for simultaneous high-side and low-side driver operation. Integrated under-voltage lockout ensures that the device operates reliably only under adequate power conditions, thus safeguarding the MOSFETs and IGBTs it controls. Moreover, its strong output drivers ensure fast switching times and low propagation delays, crucial for high-frequency applications.

IR2301 Applications

  • DC-DC Converters: Utilizes its high-frequency switching capability to efficiently control power conversion processes, enhancing performance and energy efficiency.
  • Motor Drive Control: Provides the necessary gate drive to MOSFETs or IGBTs in motor control circuits, enabling precise control over motor speed and torque in applications such as electric vehicles and industrial automation systems.
  • Renewable Energy Systems: Plays a crucial role in the power management systems of solar inverters and wind turbine converters, where reliability and efficiency are paramount.
  • Uninterruptible Power Supplies (UPS): Ensures reliable operation of power backup systems by controlling the power switching devices that manage battery storage and load transitions smoothly and efficiently.
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