IR2235PBF
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- Mfr.Part #
- IR2235PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 28-DIP (0.600, 15.24mm)
- Datasheet
- Download
- Description
- IR2235 - GATE DRIVER
- Stock
- 12,781
- In Stock ：
- 12,781
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Channel Type :
- 3-Phase
- Factory Lead Time :
- 11 Weeks
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Output Peak Current Limit-Nom :
- 0.5A
- Terminal Pitch :
- 2.54mm
- Packaging :
- Tube
- Published :
- 1996
- Power Supplies :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supply Voltage :
- 15V
- Output Current :
- 200mA
- Base Part Number :
- IR2235PBF
- Driven Configuration :
- Half-Bridge
- High Side Driver :
- yes
- Length :
- 39.7256mm
- Max Power Dissipation :
- 1.5W
- Output Voltage :
- 300mV
- Turn On Delay Time :
- 750 ns
- Fall Time (Typ) :
- 70 ns
- Terminal Position :
- Dual
- Turn On Time :
- 1 μs
- Height :
- 5.969mm
- Width :
- 14.732mm
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 950 ns
- Number of Functions :
- 3
- Power Dissipation :
- 1.5W
- Rise / Fall Time (Typ) :
- 90ns 40ns
- Resistance :
- 100Ohm
- Operating Temperature :
- 125°C TJ
- HTS Code :
- 8542.39.00.01
- Max Output Current :
- 500mA
- Turn Off Time :
- 0.95 μs
- Number of Drivers :
- 6
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 150ns
- Number of Terminations :
- 28
- Package / Case :
- 28-DIP (0.600, 15.24mm)
- High Side Voltage - Max (Bootstrap) :
- 1200V
- Mount :
- Through Hole
- Logic Voltage - VIL, VIH :
- 0.8V 2V
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Voltage - Supply :
- 10V~20V
- Input Type :
- Inverting
- Mounting Type :
- Through Hole
- Number of Pins :
- 28
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Type :
- IGBT, N-Channel MOSFET
- Nominal Supply Current :
- 100μA
- Datasheets
- IR2235PBF
Gate Drivers Infineon Technologies IR2235PBF Overview
Introducing the IR2235PBF from Infineon Technologies, a state-of-the-art Gate Driver specifically designed to enhance the performance and reliability of your power systems. This component excels in driving high-power IGBTs and MOSFETs, providing robust and efficient gate control. The IR2235PBF is engineered to meet the demanding needs of modern electronic applications, offering advanced protection features and a high degree of functionality. Its integration facilitates reduced system complexity and increased efficiency, making it an ideal choice for developers looking to optimize their power management solutions.
IR2235PBF Features
The IR2235PBF Gate Driver from Infineon Technologies includes multiple features that ensure superior performance in challenging environments. Key features include three independent high-side and low-side referenced output channels, integrated dead-time generation, and under-voltage lockout for both high-side and low-side channels. Additionally, its robust design provides exceptional operational stability and is resistant to the harsh electrical noise commonly found in high-power switching applications.
IR2235PBF Applications
- Electric Vehicles: Utilizes the IR2235PBF for driving the MOSFETs and IGBTs in traction inverter circuits, crucial for the propulsion systems of electric vehicles, ensuring efficient power conversion and motor control.
- Renewable Energy Systems: Employs the IR2235PBF in solar inverters and wind turbine converters to manage power transfer and enhance the efficiency of energy conversion from renewable sources.
- Industrial Motor Drives: Leverages the IR2235PBF for controlling high-power motors in industrial applications, offering precision and reliability in motor start-up and speed control processes.
- Power Supplies: Applies the IR2235PBF in switch-mode power supplies (SMPS) to ensure stable and efficient control of the power stages, thereby enhancing the overall reliability and performance of the power supply units.
- Uninterruptible Power Supplies (UPS): Utilizes the IR2235PBF to enhance the efficiency and reliability of UPS systems by controlling the gates of MOSFETs or IGBTs in the power stage, crucial for maintaining uninterrupted power during outages.
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