IDT71V416VS10PH
- Mfr.Part #
- IDT71V416VS10PH
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TSOP
- Datasheet
- Download
- Description
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Stock
- 18,317
- In Stock :
- 18,317
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Memory
- Output Characteristics :
- 3-STATE
- Width :
- 10.16mm
- Memory Size :
- 4Mb (256K x 16)
- Access Time :
- 10ns
- Terminal Pitch :
- 0.8mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Temperature Grade :
- COMMERCIAL
- Operating Temperature :
- 0°C ~ 70°C (TA)
- Memory Format :
- SRAM
- Memory Type :
- RAM, SRAM - Asynchronous
- Power Supplies :
- 3.3V
- ECCN Code :
- 3A991.B.2.A
- Terminal Form :
- Gull wing
- Min Operating Temperature :
- 0°C
- Supplier Device Package :
- 44-TSOP II
- JESD-30 Code :
- R-PDSO-G44
- Package / Case :
- TSOP
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Voltage - Supply :
- 3 V ~ 3.6 V
- Organization :
- 256KX16
- Pin Count :
- 44
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height Seated (Max) :
- 1.2mm
- I/O Type :
- COMMON
- Supply Voltage-Max (Vsup) :
- 3.6V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Interface :
- Parallel
- Base Part Number :
- IDT71V416
- Number of Terminations :
- 44
- Reach Compliance Code :
- Unknown
- Standby Current-Max :
- 0.02A
- Supply Voltage-Min (Vsup) :
- 3V
- JESD-609 Code :
- e3
- Write Cycle Time - Word, Page :
- 10ns
- Packaging :
- Tube
- Memory Width :
- 16
- Published :
- 2005
- Number of Functions :
- 1
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 3.3V
- Max Operating Temperature :
- 70°C
- RoHS Status :
- Non-RoHS Compliant
- Standby Voltage-Min :
- 3V
- Length :
- 18.41mm
- Supply Current-Max :
- 0.2mA
- Access Time (Max) :
- 10 ns
- HTS Code :
- 8542.32.00.41
- Memory Density :
- 4194304 bit
- Series :
- --
- Surface Mount :
- yes
- Interface :
- Parallel
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Datasheets
- IDT71V416VS10PH
IDT71V416VS10PH Documents

Memory Intersil (Renesas Electronics Corporation) IDT71V416VS10PH Overview
The Memory Intersil (Renesas Electronics Corporation) IDT71V416VS10PH is a high-performance 4Mbit Static Random Access Memory (SRAM) integrated circuit. Designed for rapid access and minimal latency, this IC offers an optimal solution for advanced computing systems where speed and reliability are paramount. Its compact 44TSOP II package ensures that it can be integrated into a variety of hardware configurations, making it highly versatile. The strategic design by Intersil, part of the renowned Renesas Electronics Corporation, underscores its commitment to delivering cutting-edge technology that meets rigorous industrial standards.
IDT71V416VS10PH Features
The IDT71V416VS10PH boasts several distinctive features that make it an ideal choice for high-demand applications. This SRAM provides a large 4Mbit capacity, allowing for substantial data storage and quick retrieval in a parallel interface configuration. The memory operates efficiently across a broad range of temperatures, which enhances its reliability and durability in challenging environments. Additionally, its low-power consumption and fast access time facilitate improved system performance and power efficiency.
IDT71V416VS10PH Applications
- Networking Equipment: Utilized in routers, switches, and firewalls where quick data buffer management is critical to handle high-speed network traffic efficiently.
- Industrial Automation: Embedded in control systems that require immediate response and data retrieval to ensure seamless production processes.
- Automotive Electronics: Used in advanced driver-assistance systems (ADAS) to process real-time data rapidly, enhancing vehicle safety and performance.
- Telecommunications: Integral to telecommunications infrastructure, supporting high-speed data transmission and switching operations.
- Consumer Electronics: Applied in high-performance gaming consoles and computers to provide enhanced memory capacity and speed, improving user experience.
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