IDH08G65C5XKSA2
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- Mfr.Part #
- IDH08G65C5XKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-2
- Datasheet
- Download
- Description
- DIODE SCHOTTKY 650V 8A TO220-2-1
- Stock
- 47,361
- In Stock ：
- 47,361
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Diodes - Rectifiers - Single
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Max Surge Current :
- 68A
- Application :
- EFFICIENCY
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Peak Reverse Current :
- 140μA
- Case Connection :
- CATHODE
- Package / Case :
- TO-220-2
- Number of Pins :
- 2
- Peak Non-Repetitive Surge Current :
- 68A
- Current - Reverse Leakage @ Vr :
- 140μA @ 650V
- Series :
- CoolSiC™+
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Forward Voltage :
- 1.7V
- Published :
- 2013
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reverse Recovery Time :
- 0ns
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Speed :
- No Recovery Time > 500mA (Io)
- Max Repetitive Reverse Voltage (Vrrm) :
- 650V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Max Power Dissipation :
- 76W
- Forward Current :
- 8A
- Capacitance @ Vr, F :
- 250pF @ 1V 1MHz
- Factory Lead Time :
- 18 Weeks
- Packaging :
- Tube
- Min Operating Temperature :
- -55°C
- Voltage - Forward (Vf) (Max) @ If :
- 1.7V @ 8A
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Max Operating Temperature :
- 175°C
- Operating Temperature - Junction :
- -55°C~175°C
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Diode Type :
- Silicon Carbide Schottky
- Current - Average Rectified (Io) :
- 8A DC
- Additional Feature :
- PD-CASE
- Number of Phases :
- 1
- Datasheets
- IDH08G65C5XKSA2
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.7V @ 8A -55°C~175°C 140μA @ 650V 2-Termination Tube TO-220-2 Through Hole
IDH08G65C5XKSA2 Description
IDH08G65C5XKSA2 represents Infineon's leading-edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thing!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
IDH08G65C5XKSA2 Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature-independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 18 mA2)
Optimized for high-temperature operation
IDH08G65C5XKSA2 Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
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