IDB09E60ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Diodes - Rectifiers - Single

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Operating Temperature - Junction :

-55°C~175°C

Number of Phases :

1

Radiation Hardening :

No

Voltage - Forward (Vf) (Max) @ If :

2V @ 9A

Max Repetitive Reverse Voltage (Vrrm) :

600V

Power Dissipation-Max :

57.7W

Current - Reverse Leakage @ Vr :

50μA @ 600V

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Halogen Free :

Halogen Free

HTS Code :

8541.10.00.80

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Diode Type :

Standard

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Forward Voltage :

2V

Reverse Recovery Time :

75 ns

Peak Non-Repetitive Surge Current :

40A

Current - Average Rectified (Io) :

19.3A DC

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Average Rectified Current :

19.3A

Pbfree Code :

No

Max Reverse Voltage (DC) :

600V

Diode Element Material :

SILICON

Mounting Type :

Surface Mount

Element Configuration :

Single

Forward Current :

19.3A

Max Operating Temperature :

175°C

Published :

2005

Pin Count :

3

Terminal Form :

Gull wing

Peak Reverse Current :

50μA

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2