HYB25D512800CE-6

Manufacturer :

Qimonda

Product Category :

Memory

Additional Feature :

AUTO/SELF REFRESH

Voltage - Supply :

2.3V~2.7V

Terminal Finish :

Matte Tin (Sn)

Number of Ports :

1

Peak Reflow Temperature (Cel) :

260

Operating Mode :

SYNCHRONOUS

Sequential Burst Length :

248

Lead Free :

Lead Free

ECCN Code :

EAR99

Supply Current-Max :

0.205mA

Memory Interface :

Parallel

Standby Current-Max :

0.0046A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supply Voltage :

2.5V

Operating Temperature :

0°C~70°C TA

RoHS Status :

RoHS Compliant

Supply Voltage-Max (Vsup) :

2.7V

Number of Functions :

1

Power Supplies :

2.5V

Output Characteristics :

3-STATE

Organization :

64MX8

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Memory Format :

DRAM

Interleaved Burst Length :

248

Length :

22.22mm

Terminal Position :

Dual

Pin Count :

66

Access Time :

166 μs

I/O Type :

COMMON

Height Seated (Max) :

1.2mm

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Packaging :

Tape and Reel (TR)

Clock Frequency :

166MHz

Mounting Type :

Surface Mount

Number of Pins :

66

Memory Type :

Volatile

Width :

10.16mm

Published :

2007

Memory Size :

512Mb 64M x 8

Surface Mount :

yes

Terminal Pitch :

0.65mm

Number of Terminations :

66

Memory Width :

8

HTS Code :

8542.32.00.28

Memory Density :

536870912 bit

Time@Peak Reflow Temperature-Max (s) :

40

Reach Compliance Code :

Unknown

Refresh Cycles :

8192

Supply Voltage-Min (Vsup) :

2.3V