HIP6601BECBZA-T
- Mfr.Part #
- HIP6601BECBZA-T
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 33,394
- In Stock :
- 33,394
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Channel Type :
- SYNCHRONOUS
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Current - Peak Output (Source, Sink) :
- --
- Series :
- --
- Driven Configuration :
- Half-Bridge
- Package / Case :
- SOIC
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Functions :
- 1
- RoHS Status :
- RoHS Compliant
- Current - Output :
- 730mA
- Max Supply Voltage :
- 13.2V
- Max Output Current :
- 730mA
- Number of Pins :
- 8
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Peak Reflow Temperature (Cel) :
- 260
- Gate Type :
- N-Channel MOSFET
- Width :
- 3.9mm
- Published :
- 2001
- Lead Free :
- Lead Free
- Number of Terminations :
- 8
- Mounting Type :
- Surface Mount
- Number of Drivers :
- 2
- Fall Time (Typ) :
- 20 ns
- Output Peak Current Limit-Nom :
- 0.73A
- Min Operating Temperature :
- 0°C
- Terminal Position :
- Dual
- Temperature Grade :
- Other
- High Side Voltage - Max (Bootstrap) :
- 15V
- Mount :
- Surface Mount
- Supplier Device Package :
- 8-SOIC-EP
- Min Supply Voltage :
- 10.8V
- Qualification Status :
- Not Qualified
- High Side Driver :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 8
- Max Operating Temperature :
- 85°C
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Rise Time :
- 50ns
- Input Type :
- Non-Inverting
- Supply Voltage :
- 12V
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- JESD-609 Code :
- e3
- Base Part Number :
- HIP6601B
- Logic Voltage - VIL, VIH :
- --
- Datasheets
- HIP6601BECBZA-T

Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BECBZA-T Overview
The HIP6601BECBZA-T by Intersil (Renesas Electronics Corporation) is an expertly designed IC Gate Driver, specifically tailored for half-bridge circuit configurations. This high-performance component is housed in an 8SOIC package, offering a compact, efficient solution for managing power in advanced electronic systems. Ideal for high-density installations where reliability and performance are critical, the HIP6601BECBZA-T enables superior control of MOSFET switching, ensuring optimized power consumption and heat dissipation. Its robust design and cutting-edge technology make it a cornerstone for developing energy-efficient, high-performance applications.
HIP6601BECBZA-T Features
The HIP6601BECBZA-T Gate Driver is known for its exceptional efficiency and reliability. It features an integrated bootstrap diode, reducing external component count and simplifying circuit layout. With its ability to drive both high-side and low-side MOSFETs, this driver offers versatile application potential, coupled with protection features such as under-voltage lockout, which ensures the longevity and stability of the device under fluctuating power conditions.
HIP6601BECBZA-T Applications
- DC/DC Converters: The HIP6601BECBZA-T facilitates efficient switching in DC/DC converters, enhancing power management and supporting higher efficiency in portable and stationary applications.
- Motor Control: Its robust output and fast switching capabilities make it ideal for motor control applications, where precise gate driving is necessary to manage motor speed and torque efficiently.
- Power Supplies: In power supply units, this gate driver ensures reliable MOSFET operation, crucial for maintaining stable voltages and currents in high-performance power systems.
- Solar Inverters: This driver is perfectly suited for the solar inverter market, enabling reliable and efficient conversion of DC to AC power, maximizing energy harnessing from solar installations.
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