HIP2101EIBZ
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- Mfr.Part #
- HIP2101EIBZ
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 2,187
- In Stock ：
- 2,187
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Number of Drivers :
- 2
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Operating Temperature :
- -55°C~150°C TJ
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Type :
- Non-Inverting
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Supply :
- 9V~14V
- High Side Voltage - Max (Bootstrap) :
- 114V
- Length :
- 4.89mm
- Turn Off Time :
- 0.056 µs
- Channel Type :
- Independent
- JESD-609 Code :
- e3
- Pin Count :
- 8
- Gate Type :
- N-Channel MOSFET
- Rise / Fall Time (Typ) :
- 10ns 10ns
- ECCN Code :
- EAR99
- Height Seated (Max) :
- 1.68mm
- Mounting Type :
- Surface Mount
- High Side Driver :
- yes
- Terminal Finish :
- Matte Tin (Sn) - annealed
- JESD-30 Code :
- R-PDSO-G8
- Number of Functions :
- 1
- Width :
- 3.9mm
- Driven Configuration :
- Half-Bridge
- Base Part Number :
- HIP2101
- Current - Peak Output (Source, Sink) :
- 2A 2A
- Terminal Form :
- Gull wing
- Turn On Time :
- 0.056 µs
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Number of Terminations :
- 8
- Supply Voltage :
- 12V
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Published :
- 2001
- Datasheets
- HIP2101EIBZ
Gate Drivers Intersil (Renesas Electronics Corporation) HIP2101EIBZ Overview
Introducing the Gate Drivers Intersil (Renesas Electronics Corporation) HIP2101EIBZ, a high-performance half-bridge gate driver designed to optimize power management solutions. This component ensures efficient control over MOSFETs and IGBTs within a compact 8SOIC package. Engineered to support a broad voltage range, the HIP2101EIBZ caters to a diverse array of applications, particularly in environments where efficiency and reliability are crucial. Its integrated high-side and low-side drivers enhance system reliability through independent inputs, providing flexible control options for various circuit configurations. This gate driver is pivotal for designers looking to enhance system performance while reducing overall footprint and power consumption.
HIP2101EIBZ Features
- High peak output drive current of up to 2A, suitable for driving high-power and high-speed MOSFETs and IGBTs.
- Wide supply voltage range from 9.5V to 20V, allowing for flexible integration into various power systems.
- Independent high-side and low-side driving inputs, facilitating better control and adaptable use in different circuit topologies.
- Integrated under-voltage lockout for enhanced operational safety and performance stability.
- Small 8-pin SOIC package, ideal for applications requiring compact size without sacrificing performance.
HIP2101EIBZ Applications
- DC/DC Converters: The HIP2101EIBZ drives MOSFETs in synchronous buck or boost converters, optimizing efficiency and power density in power supply applications.
- Motor Control: Essential for driving the high-side and low-side switches in half-bridge motor drivers, improving performance and reliability in electric vehicle powertrains and industrial automation.
- Class-D Amplifiers: Utilized to enhance audio performance by providing robust, high-speed switching necessary for high fidelity audio amplification.
- Solar Inverters: Plays a critical role in managing power conversion from DC to AC, ensuring efficient energy utilization in solar power systems.
- Uninterruptible Power Supplies (UPS): Supports critical power backup systems by driving the power switches that manage load and battery connections, ensuring continuous power supply during outages.
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