HD1750FX
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- Mfr.Part #
- HD1750FX
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 800V 24A ISOWATT-218FX
- Stock
- 29,176
- In Stock ：
- 29,176
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 75W
- Collector Emitter Saturation Voltage :
- 3V
- Emitter Base Voltage (VEBO) :
- 10V
- Number of Pins :
- 3
- Voltage - Rated DC :
- 800V
- Collector Emitter Breakdown Voltage :
- 800V
- Transistor Type :
- NPN
- hFE Min :
- 30
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Package / Case :
- ISOWATT218FX
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 75W
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Width :
- 5.7mm
- Base Part Number :
- HD1750
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 200μA
- Number of Elements :
- 1
- Mount :
- Through Hole
- Current Rating :
- 24A
- Height :
- 26.7mm
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 24A
- Collector Emitter Voltage (VCEO) :
- 800V
- Case Connection :
- Isolated
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Length :
- 15.7mm
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6.5 @ 12A 5V
- Pin Count :
- 3
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Datasheets
- HD1750FX
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
HD1750FX Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 6.5 @ 12A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 24A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 24A volts.
HD1750FX Features
the DC current gain for this device is 6.5 @ 12A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 10V
the current rating of this device is 24A
HD1750FX Applications
There are a lot of STMicroelectronics
HD1750FX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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