HD1750FX
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- Mfr.Part #
- HD1750FX
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 800V 24A ISOWATT-218FX
- Stock
- 29,176
- In Stock ：
- 29,176
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 800V
- Lead Free :
- Lead Free
- Base Part Number :
- HD1750
- Pin Count :
- 3
- Transistor Type :
- NPN
- Case Connection :
- Isolated
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 15.7mm
- Width :
- 5.7mm
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Power Dissipation :
- 75W
- Number of Terminations :
- 3
- hFE Min :
- 30
- Package / Case :
- ISOWATT218FX
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 3V
- Current - Collector Cutoff (Max) :
- 200μA
- Number of Elements :
- 1
- Max Collector Current :
- 24A
- Number of Pins :
- 3
- Max Power Dissipation :
- 75W
- Height :
- 26.7mm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 800V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6.5 @ 12A 5V
- Current Rating :
- 24A
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 800V
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Datasheets
- HD1750FX
HD1750FX Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
HD1750FX Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 6.5 @ 12A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 24A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 24A volts.
HD1750FX Features
the DC current gain for this device is 6.5 @ 12A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 10V
the current rating of this device is 24A
HD1750FX Applications
There are a lot of STMicroelectronics
HD1750FX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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