GP1S56TJ000F

Manufacturer :

Sharp Microelectronics

Product Category :

Optical Sensors - Photointerrupters - Slot Type - Transistor Output

RoHS Status :

RoHS Compliant

Factory Lead Time :

18 Weeks

Published :

1997

Reverse Breakdown Voltage :

6V

Forward Current :

50mA

Lead Free :

Lead Free

Output Configuration :

Phototransistor

Package / Case :

PCB Mount

Current - DC Forward (If) (Max) :

50mA

Rise Time :

90µs

Type :

Unamplified

Sensing Method :

Through-Beam

Collector Emitter Voltage (VCEO) :

35V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Response Time :

38μs, 48μs

Packaging :

Tube

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

35V

Min Operating Temperature :

-25°C

Forward Voltage :

1.2V

Fall Time (Typ) :

110 µs

Output Current :

20mA

Collector Emitter Breakdown Voltage :

35V

Contact Plating :

Copper, Silver, Tin

Operating Temperature :

-25°C~85°C

Current - Collector (Ic) (Max) :

20mA

Max Collector Current :

20mA

Radiation Hardening :

No

Power Dissipation :

75mW

Mount :

Through Hole

Max Operating Temperature :

85°C

Number of Pins :

4

Sensing Distance :

0.079 (2mm)