GE10022

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Mfr.Part #
GE10022
Manufacturer
Harris Corporation
Package / Case
TO-204AE
Datasheet
Download
Description
TRANS NPN DARL 240V 40A TO204AE
Stock
161
In Stock :
161

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Manufacturer :
Harris Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
No
Transistor Element Material :
SILICON
Collector Current-Max (IC) :
40 A
JESD-609 Code :
e0
Terminal Position :
BOTTOM
Collector-Emitter Voltage-Max :
350 V
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Series :
-
Number of Elements :
1
Polarity/Channel Type :
NPN
Manufacturer :
Rochester Electronics LLC
RoHS :
Non-Compliant
Number of Terminals :
2
Transistor Type :
NPN - Darlington
Supplier Device Package :
TO-204AE
Package :
Bulk
Power - Max :
250 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
PIN/PEG
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 10A, 5V
Current - Collector Cutoff (Max) :
250μA
Product Status :
Active
Surface Mount :
No
Operating Temperature :
-65°C ~ 200°C (TJ)
JEDEC-95 Code :
TO-204AE
DC Current Gain-Min (hFE) :
50
Transistor Application :
SWITCHING
Qualification Status :
COMMERCIAL
Reach Compliance Code :
Unknown
JESD-30 Code :
O-MBFM-P2
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 1A, 20A
Package / Case :
TO-204AE
Package Shape :
Round
Frequency - Transition :
-
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
240 V
Terminal Finish :
TIN LEAD
Current - Collector (Ic) (Max) :
40 A
Case Connection :
COLLECTOR
Datasheets
GE10022
Introducing Transistors - Bipolar (BJT) - Single Harris Corporation GE10022 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-204AE, Mounting Type:Through Hole, GE10022 pinout, GE10022 datasheet PDF, GE10022 amp .Beyond Transistors - Bipolar (BJT) - Single Harris Corporation GE10022 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington -65°C ~ 200°C (TJ) 250μA 1 Elements SILICON NPN TO-204AE Through Hole

GE10022 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 10A, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 1A, 20A.The product comes in the supplier device package of TO-204AE.There is a setting of 350 V for maximal collector-Emitter voltage.A 240 V maximal voltage - Collector Emitter Breakdown is present in the device.

GE10022 Features


the DC current gain for this device is 1000 @ 10A, 5V
the vce saturation(Max) is 2.5V @ 1A, 20A
the supplier device package of TO-204AE


GE10022 Applications


There are a lot of Harris Corporation
GE10022 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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