GB10SLT12-220

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Single

RoHS Status :

RoHS Compliant

Natural Thermal Resistance :

0.8 °C/W

HTS Code :

8541.10.00.80

Max Reverse Voltage (DC) :

1.2kV

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

PD-CASE

Operating Temperature - Junction :

-55°C~175°C

Number of Pins :

2

Number of Terminations :

2

Mounting Type :

Through Hole

Number of Phases :

1

Max Surge Current :

65A

Max Operating Temperature :

175°C

Max Repetitive Reverse Voltage (Vrrm) :

1.2kV

Case Connection :

CATHODE

Diode Type :

Silicon Carbide Schottky

Package / Case :

TO-220-2

Average Rectified Current :

10A

REACH SVHC :

No SVHC

Forward Voltage :

1.8V

Base Part Number :

GB10SLT12

Packaging :

Tube

ECCN Code :

EAR99

Speed :

No Recovery Time > 500mA (Io)

Max Power Dissipation :

42W

Published :

2015

Factory Lead Time :

18 Weeks

Voltage - Forward (Vf) (Max) @ If :

1.8V @ 10A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Current - Reverse Leakage @ Vr :

40μA @ 1200V

Application :

EFFICIENCY

Max Reverse Leakage Current :

52µA

Min Operating Temperature :

-55°C

Capacitance @ Vr, F :

520pF @ 1V 1MHz

Voltage - DC Reverse (Vr) (Max) :

1200V

Recovery Time :

25 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reverse Recovery Time :

0ns

Forward Current :

10A