GB01SLT12-252
- Mfr.Part #
- GB01SLT12-252
- Manufacturer
- GeneSiC Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- DIODE SILICON 1.2KV 1A TO252
- Stock
- 14,377
- In Stock :
- 14,377
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- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Factory Lead Time :
- 35 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Max Reverse Leakage Current :
- 4μA
- Speed :
- No Recovery Time > 500mA (Io)
- Peak Reverse Current :
- 1μA
- Case Connection :
- CATHODE
- Recovery Time :
- 17 ns
- Max Reverse Voltage (DC) :
- 1.2kV
- Operating Temperature - Junction :
- -55°C~175°C
- Lifecycle Status :
- PRODUCTION (Last Updated: 6 months ago)
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Forward Surge Current (Ifsm) :
- 65A
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Cut Tape (CT)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Capacitance @ Vr, F :
- 69pF @ 1V 1MHz
- RoHS Status :
- RoHS Compliant
- Height :
- 2.507mm
- Average Rectified Current :
- 1A
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Forward Current :
- 6A
- Max Operating Temperature :
- 175°C
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Reverse Recovery Time :
- 0ns
- Min Operating Temperature :
- -55°C
- Max Junction Temperature (Tj) :
- 175°C
- Number of Terminations :
- 2
- Voltage - DC Reverse (Vr) (Max) :
- 1200V
- Number of Elements :
- 1
- Max Power Dissipation :
- 42W
- Voltage - Forward (Vf) (Max) @ If :
- 1.8V @ 1A
- Element Configuration :
- Single
- Additional Feature :
- PD-CASE
- Published :
- 2015
- Current - Reverse Leakage @ Vr :
- 2μA @ 1200V
- Max Repetitive Reverse Voltage (Vrrm) :
- 1.2kV
- Max Surge Current :
- 10A
- Diode Type :
- Silicon Carbide Schottky
- Datasheets
- GB01SLT12-252
GB01SLT12-252 Documents
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 1A -55°C~175°C 2μA @ 1200V 2-Termination Cut Tape (CT) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
GB01SLT12-252 Overview
Reverse leakage current from this device is 4μA volts at its maximum.For this device, the average rectified current is 1A volts.In this case, forward current can reach 6A.Electrical or electronic devices generate the least amount of 42W heat (energy loss).Phase diode rectifier is possible to use a surge current of maximum value 10A.Based on the data chart, the peak reverse is 1μA.
GB01SLT12-252 Features
a maximal reverse leakage current of 4μA volts
an average rectified current of 1A volts
the least amount of 42W heat (energy loss)
the peak reverse is 1μA
GB01SLT12-252 Applications
There are a lot of GeneSiC Semiconductor
GB01SLT12-252 applications of single-phase diode rectifier.
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
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