GB01SLT12-252

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Mfr.Part #
GB01SLT12-252
Manufacturer
GeneSiC Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
DIODE SILICON 1.2KV 1A TO252
Stock
14,377
In Stock :
14,377

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Manufacturer :
GeneSiC Semiconductor
Product Category :
Diodes - Rectifiers - Single
Factory Lead Time :
35 Weeks
JESD-30 Code :
R-PSSO-G2
Max Reverse Leakage Current :
4μA
Speed :
No Recovery Time > 500mA (Io)
Peak Reverse Current :
1μA
Case Connection :
CATHODE
Recovery Time :
17 ns
Max Reverse Voltage (DC) :
1.2kV
Operating Temperature - Junction :
-55°C~175°C
Lifecycle Status :
PRODUCTION (Last Updated: 6 months ago)
Mount :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Max Forward Surge Current (Ifsm) :
65A
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Cut Tape (CT)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Capacitance @ Vr, F :
69pF @ 1V 1MHz
RoHS Status :
RoHS Compliant
Height :
2.507mm
Average Rectified Current :
1A
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Forward Current :
6A
Max Operating Temperature :
175°C
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Terminal Form :
Gull wing
Reverse Recovery Time :
0ns
Min Operating Temperature :
-55°C
Max Junction Temperature (Tj) :
175°C
Number of Terminations :
2
Voltage - DC Reverse (Vr) (Max) :
1200V
Number of Elements :
1
Max Power Dissipation :
42W
Voltage - Forward (Vf) (Max) @ If :
1.8V @ 1A
Element Configuration :
Single
Additional Feature :
PD-CASE
Published :
2015
Current - Reverse Leakage @ Vr :
2μA @ 1200V
Max Repetitive Reverse Voltage (Vrrm) :
1.2kV
Max Surge Current :
10A
Diode Type :
Silicon Carbide Schottky
Introducing Diodes - Rectifiers - Single GeneSiC Semiconductor GB01SLT12-252 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, GB01SLT12-252 pinout, GB01SLT12-252 datasheet PDF, GB01SLT12-252 amp .Beyond Diodes - Rectifiers - Single GeneSiC Semiconductor GB01SLT12-252 ,we also offer BAT54,235, BAT54,215, BAS16L,315, Our vast inventory has you covered. Contact us now for immediate solutions.

GeneSiC Semiconductor GB01SLT12-252


Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 1A -55°C~175°C 2μA @ 1200V 2-Termination Cut Tape (CT) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

GB01SLT12-252 Overview


Reverse leakage current from this device is 4μA volts at its maximum.For this device, the average rectified current is 1A volts.In this case, forward current can reach 6A.Electrical or electronic devices generate the least amount of 42W heat (energy loss).Phase diode rectifier is possible to use a surge current of maximum value 10A.Based on the data chart, the peak reverse is 1μA.

GB01SLT12-252 Features


a maximal reverse leakage current of 4μA volts
an average rectified current of 1A volts
the least amount of 42W heat (energy loss)
the peak reverse is 1μA


GB01SLT12-252 Applications


There are a lot of GeneSiC Semiconductor
GB01SLT12-252 applications of single-phase diode rectifier.


  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
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