G10N03S

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

12mOhm @ 6A, 10V

Product Status :

Active

Power Dissipation (Max) :

2.5W (Tc)

Supplier Device Package :

8-SOP

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

-

Drain to Source Voltage (Vdss) :

30 V

Input Capacitance (Ciss) (Max) @ Vds :

839 pF @ 15 V

FET Type :

N-Channel

Series :

-

Technology :

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Operating Temperature :

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 4.5 V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V