FST8335M

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Number of Phases :

1

Published :

2012

ECCN Code :

EAR99

Max Reverse Leakage Current :

1μA

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-55°C~150°C

Number of Terminations :

3

Current - Reverse Leakage @ Vr :

1.5mA @ 20V

Current - Average Rectified (Io) :

80A DC

Number of Elements :

2

Average Rectified Current :

80A

Peak Reverse Current :

1A

Packaging :

Bulk

Max Reverse Voltage (DC) :

35V

Package / Case :

D61-3M

Terminal Form :

THROUGH-HOLE

Forward Current :

80A

Output Current-Max :

40A

Diode Element Material :

SILICON

Application :

Power

Max Repetitive Reverse Voltage (Vrrm) :

35V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.10.00.80

Factory Lead Time :

4 Weeks

Diode Configuration :

1 Pair Common Cathode

JESD-30 Code :

R-PSFM-T3

Min Operating Temperature :

-40°C

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Voltage - Forward (Vf) (Max) @ If :

650mV @ 80A

Max Surge Current :

800A

Diode Type :

Schottky

Max Operating Temperature :

175°C