FMB100
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- Mfr.Part #
- FMB100
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SUPERSOT-6
- Stock
- 491
- In Stock ：
- 491
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- Transition Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 75V
- Number of Pins :
- 6
- Weight :
- 36mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 5V
- hFE Min :
- 100
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA
- Collector Emitter Saturation Voltage :
- 400mV
- Number of Elements :
- 2
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Pbfree Code :
- yes
- Element Configuration :
- Dual
- Mount :
- Surface Mount
- Base Part Number :
- FMB100
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 700mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 6
- RoHS Status :
- RoHS Compliant
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 45V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Power Dissipation :
- 700mW
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 300MHz
- Mounting Type :
- Surface Mount
- Current Rating :
- 500mA
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Frequency :
- 300MHz
- Datasheets
- FMB100
NPN -55°C~150°C TJ 50nA 2 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMB100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 20mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
FMB100 Features
the DC current gain for this device is 100 @ 150mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
FMB100 Applications
There are a lot of ON Semiconductor
FMB100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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