FMB100
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- Mfr.Part #
- FMB100
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SUPERSOT-6
- Stock
- 491
- In Stock ：
- 491
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Power Dissipation :
- 700mW
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 45V
- Max Collector Current :
- 500mA
- Number of Pins :
- 6
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- hFE Min :
- 100
- Element Configuration :
- Dual
- Collector Emitter Voltage (VCEO) :
- 45V
- Current Rating :
- 500mA
- Base Part Number :
- FMB100
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Current - Collector Cutoff (Max) :
- 50nA
- Voltage - Rated DC :
- 45V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- Frequency :
- 300MHz
- Max Power Dissipation :
- 700mW
- Transition Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 400mV
- Weight :
- 36mg
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Terminations :
- 6
- Number of Elements :
- 2
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 75V
- Gain Bandwidth Product :
- 300MHz
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 5V
- RoHS Status :
- RoHS Compliant
- Datasheets
- FMB100
NPN -55°C~150°C TJ 50nA 2 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMB100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 20mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
FMB100 Features
the DC current gain for this device is 100 @ 150mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
FMB100 Applications
There are a lot of ON Semiconductor
FMB100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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