FM25V10-G

Manufacturer :

Infineon Technologies

Product Category :

Memory

Series :

F-RAM™

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~85°C TA

Terminal Pitch :

1.27mm

Operating Mode :

SYNCHRONOUS

Terminal Finish :

Tin (Sn)

Pin Count :

8

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Supply Current-Max :

0.003mA

Supply Voltage-Max (Vsup) :

3.6V

Surface Mount :

yes

Width :

3.9mm

Power Supplies :

2.5/3.3V

Number of Functions :

1

Clock Frequency :

40MHz

Voltage - Supply :

2V~3.6V

Organization :

128KX8

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

8

Memory Format :

FRAM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Density :

1048576 bit

Packaging :

Tube

Memory Interface :

SPI

Qualification Status :

Not Qualified

Base Part Number :

FM25V10

Memory Type :

Non-Volatile

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Supply Voltage-Min (Vsup) :

2V

Mounting Type :

Surface Mount

Memory Size :

1Mb 128K x 8

Standby Current-Max :

0.00015A

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Memory Width :

8

ECCN Code :

EAR99

Height Seated (Max) :

1.75mm

HTS Code :

8542.32.00.71

Length :

4.9mm

Supply Voltage :

3.3V

JESD-30 Code :

R-PDSO-G8

Published :

2012