FJL6920TU
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- Mfr.Part #
- FJL6920TU
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS NPN 800V 20A TO264-3
- Stock
- 16,154
- In Stock ：
- 16,154
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Through Hole
- Max Collector Current :
- 30A
- Current - Collector Cutoff (Max) :
- 1mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Weight :
- 6.756g
- Max Junction Temperature (Tj) :
- 150°C
- Collector Base Voltage (VCBO) :
- 1.7kV
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 800V
- Max Power Dissipation :
- 200W
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Published :
- 2014
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Current Rating :
- 20A
- Height :
- 29mm
- hFE Min :
- 5
- Collector Emitter Voltage (VCEO) :
- 800V
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2.75A, 11A
- Package / Case :
- TO-264-3, TO-264AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5.5 @ 11A 5V
- Element Configuration :
- Single
- Factory Lead Time :
- 19 Weeks
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 3V
- Power Dissipation :
- 200W
- Packaging :
- Tube
- Voltage - Rated DC :
- 800V
- Polarity/Channel Type :
- NPN
- Datasheets
- FJL6920TU
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole
FJL6920TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5.5 @ 11A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 2.75A, 11A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 30A volts.
FJL6920TU Features
the DC current gain for this device is 5.5 @ 11A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2.75A, 11A
the emitter base voltage is kept at 6V
the current rating of this device is 20A
FJL6920TU Applications
There are a lot of ON Semiconductor
FJL6920TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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