FJL4315OTU
- Mfr.Part #
- FJL4315OTU
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO264-3
- Stock
- 3,970
- In Stock :
- 3,970
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 17A
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 150W
- Width :
- 5mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 400mV
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Frequency :
- 30MHz
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 15A
- Power Dissipation :
- 150W
- Number of Pins :
- 3
- Height :
- 26mm
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Operating Temperature :
- -50°C~150°C TJ
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 30MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Collector Emitter Voltage (VCEO) :
- 250V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 30MHz
- Collector Emitter Breakdown Voltage :
- 250V
- Manufacturer Package Identifier :
- TO264A03REV2
- Collector Base Voltage (VCBO) :
- 250V
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 230V
- hFE Min :
- 55
- Published :
- 2005
- Terminal Finish :
- Tin (Sn)
- Length :
- 20mm
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 6.756g
- Package / Case :
- TO-264-3, TO-264AA
- Datasheets
- FJL4315OTU

NPN -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole
FJL4315OTU Overview
In this device, the DC current gain is 80 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 800mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).30MHz is present in the transition frequency.Maximum collector currents can be below 17A volts.
FJL4315OTU Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
FJL4315OTU Applications
There are a lot of ON Semiconductor
FJL4315OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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