FF650R17IE4PBOSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

10

Published :

2007

Input Capacitance (Cies) @ Vce :

54nF @ 25V

Collector Emitter Voltage (VCEO) :

1.7kV

Turn On Time :

720 ns

NTC Thermistor :

yes

Mounting Type :

Chassis Mount

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 650A

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Element Configuration :

Dual

Voltage - Collector Emitter Breakdown (Max) :

1700V

Input :

Standard

Turn Off Time-Nom (toff) :

1870 ns

Current - Collector (Ic) (Max) :

650A

Factory Lead Time :

50 Weeks

Transistor Element Material :

SILICON

Terminal Position :

UPPER

IGBT Type :

Trench Field Stop

Case Connection :

Isolated

Number of Elements :

2

Mount :

Screw

Package / Case :

Module

Current - Collector Cutoff (Max) :

5mA

Moisture Sensitivity Level (MSL) :

Not Applicable

JESD-30 Code :

R-PUFM-X10

Additional Feature :

UL APPROVED

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Configuration :

2 Independent

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED