ESM6045DV
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- Mfr.Part #
- ESM6045DV
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- TRANS NPN DARL 450V 84A ISOTOP
- Stock
- 34,510
- In Stock ：
- 34,510
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.35V @ 4A, 70A
- Number of Terminations :
- 4
- Height :
- 9.1mm
- Terminal Position :
- UPPER
- Width :
- 25.4mm
- Mounting Type :
- Chassis Mount
- Case Connection :
- Isolated
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Breakdown Voltage :
- 450V
- Max Collector Current :
- 84A
- Power Dissipation :
- 250W
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 250W
- Rise Time-Max :
- 5500ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 70A 5V
- Number of Pins :
- 4
- Pin Count :
- 4
- ECCN Code :
- EAR99
- VCEsat-Max :
- 2 V
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 450V
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Mount :
- Chassis Mount, Panel, Screw
- Base Part Number :
- ESM6045
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Package / Case :
- ISOTOP
- Radiation Hardening :
- No
- Length :
- 38.2mm
- Transistor Application :
- SWITCHING
- Current Rating :
- 84A
- Emitter Base Voltage (VEBO) :
- 7V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- UNSPECIFIED
- Polarity :
- NPN
- Fall Time-Max (tf) :
- 500ns
- Voltage - Rated DC :
- 450V
- hFE Min :
- 120
- Datasheets
- ESM6045DV
NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount
ESM6045DV Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 70A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.35V @ 4A, 70A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 84A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 84A volts.
ESM6045DV Features
the DC current gain for this device is 120 @ 70A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 1.35V @ 4A, 70A
the emitter base voltage is kept at 7V
the current rating of this device is 84A
ESM6045DV Applications
There are a lot of STMicroelectronics
ESM6045DV applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| ESM6045AV | STMicroelectronics | 35,552 | TRANS NPN DARL 450V 72A ISOTOP |
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