EL7212CSZ-T7

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Mfr.Part #
EL7212CSZ-T7
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC GATE DRVR LOW-SIDE 8SOIC
Stock
40,013
In Stock :
40,013

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
JESD-30 Code :
R-PDSO-G8
ECCN Code :
EAR99
Output Peak Current Limit-Nom :
2A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise / Fall Time (Typ) :
7.5ns 10ns
Published :
2002
Number of Functions :
1
Voltage - Supply :
4.5V~15V
Channel Type :
Independent
Surface Mount :
yes
Number of Terminations :
8
Terminal Finish :
Matte Tin (Sn) - annealed
Width :
3.911mm
Pin Count :
8
Driven Configuration :
Low-Side
Factory Lead Time :
15 Weeks
Number of Drivers :
2
Packaging :
Cut Tape (CT)
Input Type :
Inverting
Mounting Type :
Surface Mount
Current - Peak Output (Source, Sink) :
2A 2A
Length :
4.9mm
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Gate Type :
N-Channel, P-Channel MOSFET
Terminal Form :
Gull wing
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Base Part Number :
EL7212
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-40°C~125°C TJ
Terminal Position :
Dual
JESD-609 Code :
e3
Logic Voltage - VIL, VIH :
0.8V 2.4V
High Side Driver :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Interface IC Type :
BUFFER OR INVERTER BASED MOSFET DRIVER
Datasheets
EL7212CSZ-T7
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) EL7212CSZ-T7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Base Part Number:EL7212, Operating Temperature:-40°C~125°C TJ, EL7212CSZ-T7 pinout, EL7212CSZ-T7 datasheet PDF, EL7212CSZ-T7 amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) EL7212CSZ-T7 ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) EL7212CSZ-T7


Gate Drivers Intersil (Renesas Electronics Corporation) EL7212CSZ-T7 Overview

The Gate Drivers Intersil (Renesas Electronics Corporation) EL7212CSZ-T7 is a high-performance integrated circuit designed for driving low-side power MOSFETs and IGBTs in various applications. With its advanced features and reliability, this IC offers superior performance in controlling power switches, making it an ideal choice for industrial and automotive applications.

Featuring state-of-the-art technology and precision engineering, the EL7212CSZ-T7 delivers exceptional gate drive capability, enabling efficient and accurate control of power transistors. Its compact 8SOIC package ensures easy integration into existing designs, while its robust design ensures dependable operation even in harsh environments.

EL7212CSZ-T7 Features

  • High-performance gate driver IC
  • Designed for driving low-side power MOSFETs and IGBTs
  • Advanced technology for superior performance
  • Compact 8SOIC package for easy integration
  • Robust design for reliable operation in harsh environments
  • Wide range of industrial and automotive applications

EL7212CSZ-T7 Applications

  • Industrial automation systems: The EL7212CSZ-T7 is ideal for driving power MOSFETs and IGBTs in industrial automation equipment such as motor drives, robotics, and PLCs, ensuring precise control and efficient operation.
  • Automotive electronics: In automotive applications, this gate driver IC is used in motor control units, electronic power steering systems, and hybrid/electric vehicle inverters, providing reliable and efficient power switching for vehicle propulsion and control systems.
  • Power supplies: The EL7212CSZ-T7 is suitable for use in power supply units for servers, telecommunications equipment, and consumer electronics, offering high-speed switching capability and accurate control for optimized power delivery.
  • Renewable energy systems: In solar inverters, wind turbine converters, and other renewable energy systems, this IC facilitates precise control of power transistors, maximizing energy conversion efficiency and ensuring stable operation under varying environmental conditions.
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