EDB8132B4PB-8D-F-D

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Mfr.Part #
EDB8132B4PB-8D-F-D
Manufacturer
Micron Technology
Package / Case
168-WFBGA
Datasheet
Download
Description
IC DRAM 8GBIT PARALLEL 168FBGA
Stock
12,547
In Stock :
12,547

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Manufacturer :
Micron Technology
Product Category :
Memory
Max Frequency :
400MHz
Number of Functions :
1
Supply Voltage :
1.2V
Operating Temperature :
-30°C~85°C TC
Access Mode :
SINGLE BANK PAGE BURST
Operating Supply Voltage :
1.8V
Memory Size :
8Gb 256M x 32
Operating Mode :
SYNCHRONOUS
Memory Format :
DRAM
Terminal Pitch :
0.5mm
Height Seated (Max) :
0.8mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Width :
32
Surface Mount :
yes
Terminal Position :
BOTTOM
Mounting Type :
Surface Mount
Length :
12mm
Memory Interface :
Parallel
RoHS Status :
ROHS3 Compliant
Package / Case :
168-WFBGA
Published :
2014
Packaging :
Bulk
Density :
8 GB
Address Bus Width :
14b
Supply Voltage-Min (Vsup) :
1.14V
Supply Voltage-Max (Vsup) :
1.3V
Number of Pins :
168
Voltage - Supply :
1.14V~1.95V
Organization :
256MX32
Memory Type :
Volatile
Factory Lead Time :
12 Weeks
Number of Ports :
1
Additional Feature :
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
168
Introducing Memory Micron Technology EDB8132B4PB-8D-F-D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-30°C~85°C TC, Mounting Type:Surface Mount, Package / Case:168-WFBGA, Number of Pins:168, Number of Terminations:168, EDB8132B4PB-8D-F-D pinout, EDB8132B4PB-8D-F-D datasheet PDF, EDB8132B4PB-8D-F-D amp .Beyond Memory Micron Technology EDB8132B4PB-8D-F-D ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology EDB8132B4PB-8D-F-D


Memory Micron Technology EDB8132B4PB-8D-F-D Overview

Introducing the Memory Micron Technology EDB8132B4PB-8D-F-D, a cutting-edge IC DRAM component engineered for high-performance and reliability. Designed by Micron Technology, a leader in memory innovation, this product features 8GBIT of DRAM in a compact 168FBGA package, making it ideal for sophisticated electronics that demand large memory capacity and fast access speeds. The high-density design and advanced manufacturing technology ensure that this memory module delivers unmatched performance and stability, suitable for a wide range of industrial applications.

EDB8132B4PB-8D-F-D Features

This DRAM IC excels in delivering high-speed data transmission and low power consumption, crucial for extending the battery life of portable devices. Its 168FBGA packaging is optimized for robustness, offering enhanced thermal characteristics and improved reliability under varied environmental conditions. Furthermore, the 8GBIT capacity allows for extensive data storage and quick retrieval, supporting complex applications and multitasking without performance degradation.

EDB8132B4PB-8D-F-D Applications

  • Advanced Computing Systems: Utilized in servers and high-end computing devices, this DRAM improves system responsiveness and allows for the handling of large datasets, essential in data centers and research facilities.
  • Mobile Devices: Essential for smartphones and tablets, where it maximizes efficiency and enables enhanced multitasking and user experience without sacrificing battery life.
  • Networking Equipment: Deployed in routers and switches, the high capacity and speed of the EDB8132B4PB-8D-F-D support the demanding throughput and reliability needed for data communication and real-time processing.
  • Gaming Consoles: Improves gaming experiences by speeding up load times and enabling complex gaming scenarios with its high-speed data access and large storage capacity.
  • Automotive Systems: Integrated into automotive electronics, it supports advanced driver-assistance systems (ADAS) and infotainment systems, providing the quick data access necessary for real-time decision-making and multimedia processing.
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