EDB5432BEPA-1DAAT-F-D

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Mfr.Part #
EDB5432BEPA-1DAAT-F-D
Manufacturer
Micron Technology
Package / Case
168-WFBGA
Datasheet
Download
Description
IC DRAM 512MBIT PAR 168WFBGA
Stock
49,630
In Stock :
49,630

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Manufacturer :
Micron Technology
Product Category :
Memory
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-40°C~105°C TC
Organization :
16MX32
Supply Voltage-Max (Vsup) :
1.3V
Number of Pins :
168
Mounting Type :
Surface Mount
Length :
12mm
Memory Type :
Volatile
Terminal Pitch :
0.5mm
Terminal Position :
BOTTOM
Number of Functions :
1
Number of Ports :
1
Packaging :
Bulk
Voltage - Supply :
1.14V~1.95V
Package / Case :
168-WFBGA
Memory Interface :
Parallel
Height Seated (Max) :
0.8mm
Additional Feature :
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Memory Size :
512Mb 16M x 32
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
168
Supply Voltage-Min (Vsup) :
1.14V
RoHS Status :
ROHS3 Compliant
Density :
512 Mb
Operating Mode :
SYNCHRONOUS
Width :
12mm
Factory Lead Time :
8 Weeks
Surface Mount :
yes
Memory Width :
32
Max Frequency :
533MHz
Supply Voltage :
1.2V
Memory Format :
DRAM
Access Mode :
SINGLE BANK PAGE BURST
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Introducing Memory Micron Technology EDB5432BEPA-1DAAT-F-D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~105°C TC, Number of Pins:168, Mounting Type:Surface Mount, Package / Case:168-WFBGA, Number of Terminations:168, EDB5432BEPA-1DAAT-F-D pinout, EDB5432BEPA-1DAAT-F-D datasheet PDF, EDB5432BEPA-1DAAT-F-D amp .Beyond Memory Micron Technology EDB5432BEPA-1DAAT-F-D ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology EDB5432BEPA-1DAAT-F-D


Memory Micron Technology EDB5432BEPA-1DAAT-F-D Overview

The Memory Micron Technology EDB5432BEPA-1DAAT-F-D is a high-performance 512Mbit DRAM integrated circuit, designed and manufactured by Micron Technology. Engineered to meet the rigorous demands of advanced computing systems, this IC features a dense 168-word fine ball grid array (WFBGA) package that ensures compactness and enhanced performance characteristics. This product is specifically designed for applications that require fast access to large amounts of data, enabling efficient and reliable operation in critical systems. Its robust design makes it an ideal choice for manufacturers looking to incorporate reliable memory solutions in their advanced electronic products.

EDB5432BEPA-1DAAT-F-D Features

This DRAM IC boasts a capacity of 512Mbit with parallel data access capabilities, housed in a 168WFBGA packaging that allows for efficient thermal management and reduced footprint on printed circuit boards. The device operates at a low voltage, which minimizes power consumption while maximizing reliability and lifespan.

EDB5432BEPA-1DAAT-F-D Applications

  • Computing Systems: Utilized in desktops, laptops, and servers for high-speed data processing and storage, enhancing overall system performance.
  • Telecommunication Equipment: Acts as a buffer and storage component in routers, switches, and base stations, facilitating rapid data flow and connectivity.
  • Consumer Electronics: Embedded in digital TVs, set-top boxes, and gaming consoles, providing necessary memory for multimedia applications and user interfaces.
  • Automotive Electronics: Supports advanced driver-assistance systems (ADAS) and infotainment systems with reliable data storage and access capabilities, crucial for vehicle safety and functionality.
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