EDB2432B4MA-1DAUT-F-D

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Mfr.Part #
EDB2432B4MA-1DAUT-F-D
Manufacturer
Micron Technology
Package / Case
134-VFBGA
Datasheet
Download
Description
IC DRAM 2GBIT PARALLEL 134VFBGA
Stock
8,454
In Stock :
8,454

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Manufacturer :
Micron Technology
Product Category :
Memory
Memory Density :
2147483648 bit
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Package / Case :
134-VFBGA
Voltage - Supply :
1.14V~1.95V
Supply Voltage-Max (Vsup) :
1.3V
Memory Interface :
Parallel
Organization :
64MX32
ECCN Code :
EAR99
Number of Ports :
1
Packaging :
Bulk
Terminal Pitch :
0.65mm
RoHS Status :
ROHS3 Compliant
Additional Feature :
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
11.5mm
Factory Lead Time :
16 Weeks
Memory Format :
DRAM
Surface Mount :
yes
Supply Voltage-Min (Vsup) :
1.14V
Number of Terminations :
134
JESD-30 Code :
R-PBGA-B134
Clock Frequency :
533MHz
Access Mode :
SINGLE BANK PAGE BURST
Memory Type :
Volatile
Memory Size :
2Gb 64M x 32
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Functions :
1
Operating Mode :
SYNCHRONOUS
Mounting Type :
Surface Mount
Terminal Position :
BOTTOM
Height Seated (Max) :
1mm
Operating Temperature :
-40°C~125°C TC
Supply Voltage :
1.2V
Memory Width :
32
Width :
10mm
Introducing Memory Micron Technology EDB2432B4MA-1DAUT-F-D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:134-VFBGA, Number of Terminations:134, Mounting Type:Surface Mount, Operating Temperature:-40°C~125°C TC, EDB2432B4MA-1DAUT-F-D pinout, EDB2432B4MA-1DAUT-F-D datasheet PDF, EDB2432B4MA-1DAUT-F-D amp .Beyond Memory Micron Technology EDB2432B4MA-1DAUT-F-D ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology EDB2432B4MA-1DAUT-F-D


Memory Micron Technology EDB2432B4MA-1DAUT-F-D Overview

Discover unparalleled performance and reliability with the Memory Micron Technology EDB2432B4MA-1DAUT-F-D. This cutting-edge integrated circuit (IC) DRAM, boasting a capacity of 2GBIT, is engineered to meet the demands of high-performance computing systems. With its advanced parallel architecture and compact 134VFBGA package, this IC is optimized for seamless integration into a wide range of applications.

Whether you're designing industrial-grade servers, networking equipment, or consumer electronics, the Memory Micron Technology EDB2432B4MA-1DAUT-F-D sets the standard for memory performance and efficiency. Trust in Micron's legacy of innovation and reliability to elevate your next project to new heights.

EDB2432B4MA-1DAUT-F-D Features

  • High-capacity 2GBIT IC DRAM
  • Parallel architecture for enhanced performance
  • Compact 134VFBGA package for space-constrained designs
  • Manufactured by Micron Technology for superior quality and reliability
  • Designed for industrial-grade servers, networking equipment, and consumer electronics

EDB2432B4MA-1DAUT-F-D Applications

  • Server Systems: Power your enterprise-grade servers with the Memory Micron Technology EDB2432B4MA-1DAUT-F-D for unparalleled performance and reliability. Experience lightning-fast data access and seamless multitasking capabilities, ensuring your mission-critical applications run smoothly.
  • Networking Equipment: Enhance the speed and efficiency of your networking infrastructure with the Memory Micron Technology EDB2432B4MA-1DAUT-F-D. From routers to switches, this high-capacity IC DRAM optimizes data processing and ensures uninterrupted connectivity for your users.
  • Consumer Electronics: Elevate the performance of your consumer electronics products with the Memory Micron Technology EDB2432B4MA-1DAUT-F-D. From smart TVs to gaming consoles, this compact yet powerful IC enables seamless multitasking and responsive user experiences.
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Shipping Cost

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