EDB1332BDBH-1DAAT-F-D

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Mfr.Part #
EDB1332BDBH-1DAAT-F-D
Manufacturer
Micron Technology
Package / Case
134-VFBGA
Datasheet
Download
Description
IC DRAM 1GBIT PARALLEL 134VFBGA
Stock
43,156
In Stock :
43,156

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Manufacturer :
Micron Technology
Product Category :
Memory
Packaging :
Bulk
Package / Case :
134-VFBGA
Number of Ports :
1
Supply Voltage-Min (Vsup) :
1.14V
Supply Voltage :
1.2V
Terminal Position :
BOTTOM
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
12 Weeks
Max Frequency :
533MHz
Additional Feature :
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
JESD-609 Code :
e1
Access Mode :
MULTI BANK PAGE BURST
Voltage - Supply :
1.14V~1.95V
Time@Peak Reflow Temperature-Max (s) :
30
Mount :
Surface Mount
Number of Pins :
134
Organization :
32MX32
Density :
1 Gb
Memory Type :
Volatile
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Address Bus Width :
13b
Length :
11.5mm
Number of Terminations :
134
Data Bus Width :
32b
Published :
2016
Operating Mode :
SYNCHRONOUS
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Format :
DRAM
Height Seated (Max) :
1mm
Memory Width :
32
Memory Size :
1Gb 32M x 32
Memory Interface :
Parallel
Supply Voltage-Max (Vsup) :
1.3V
Number of Functions :
1
Operating Temperature :
-40°C~105°C TC
Operating Supply Voltage :
1.2V
RoHS Status :
ROHS3 Compliant
Contact Plating :
Copper, Silver, Tin
Terminal Pitch :
0.65mm
Introducing Memory Micron Technology EDB1332BDBH-1DAAT-F-D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:134-VFBGA, Number of Pins:134, Number of Terminations:134, Mounting Type:Surface Mount, Operating Temperature:-40°C~105°C TC, EDB1332BDBH-1DAAT-F-D pinout, EDB1332BDBH-1DAAT-F-D datasheet PDF, EDB1332BDBH-1DAAT-F-D amp .Beyond Memory Micron Technology EDB1332BDBH-1DAAT-F-D ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology EDB1332BDBH-1DAAT-F-D


Memory Micron Technology EDB1332BDBH-1DAAT-F-D Overview

The Memory Micron Technology EDB1332BDBH-1DAAT-F-D is a high-performance 1Gbit DRAM chip, encapsulated in a 134VFBGA package, designed to deliver robust parallel processing capabilities. This product, engineered by Micron Technology, one of the leading manufacturers in memory technologies, offers an optimal solution for managing complex computations and enhancing the efficiency of high-demand systems. The high capacity and compact form factor make it an ideal choice for applications requiring dense memory in a space-constrained setup. With its advanced technology, the Memory Micron Technology EDB1332BDBH-1DAAT-F-D stands out in the market, ensuring reliable performance for critical applications.

EDB1332BDBH-1DAAT-F-D Features

This DRAM IC offers a significant 1GBit storage capacity with a parallel interface, providing fast and efficient data handling capabilities suitable for a wide range of applications. The 134VFBGA package is highly favored for its minimal footprint and enhanced thermal characteristics, which are critical in tightly packed system configurations. Additionally, its high-speed operation and stability under extended operational temperatures make it an excellent choice for both commercial and industrial applications.

EDB1332BDBH-1DAAT-F-D Applications

  • Consumer Electronics: Used in devices such as digital cameras and gaming consoles to enhance processing power and speed.
  • Mobile Computing: Ideal for use in laptops and tablets where space is at a premium and high memory capacity is required for multitasking.
  • Networking Hardware: Employs in routers and switches to manage data flow efficiently and maintain high-speed network performance.
  • Automotive Systems: Supports advanced driver-assistance systems (ADAS) by handling large volumes of data from vehicle sensors quickly.
  • Industrial Automation: Applied in complex automated systems for better control and faster processing of operational data.
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