EDB1316BDBH-1DIT-F-D

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Mfr.Part #
EDB1316BDBH-1DIT-F-D
Manufacturer
Micron Technology
Package / Case
134-VFBGA
Datasheet
Download
Description
IC DRAM 1GBIT PARALLEL 134VFBGA
Stock
49,309
In Stock :
49,309

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Manufacturer :
Micron Technology
Product Category :
Memory
Peak Reflow Temperature (Cel) :
260
Width :
10mm
Memory Type :
Volatile
Terminal Position :
BOTTOM
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Operating Temperature :
-40°C~85°C TC
Supply Voltage-Min (Vsup) :
1.14V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Length :
11.5mm
JESD-30 Code :
R-PBGA-B134
Package / Case :
134-VFBGA
Memory Width :
16
Number of Terminations :
134
Number of Functions :
1
JESD-609 Code :
e1
Height Seated (Max) :
1mm
Surface Mount :
yes
Memory Interface :
Parallel
ECCN Code :
EAR99
Access Mode :
SINGLE BANK PAGE BURST
Supply Voltage :
1.2V
Memory Size :
1Gb 64M x 16
Additional Feature :
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Operating Mode :
SYNCHRONOUS
Memory Format :
DRAM
Number of Ports :
1
Packaging :
Bulk
Clock Frequency :
533MHz
Terminal Pitch :
0.65mm
Time@Peak Reflow Temperature-Max (s) :
30
Factory Lead Time :
13 Weeks
Memory Density :
1073741824 bit
Supply Voltage-Max (Vsup) :
1.3V
Voltage - Supply :
1.14V~1.95V
Organization :
64MX16
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Introducing Memory Micron Technology EDB1316BDBH-1DIT-F-D from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TC, Package / Case:134-VFBGA, Number of Terminations:134, EDB1316BDBH-1DIT-F-D pinout, EDB1316BDBH-1DIT-F-D datasheet PDF, EDB1316BDBH-1DIT-F-D amp .Beyond Memory Micron Technology EDB1316BDBH-1DIT-F-D ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology EDB1316BDBH-1DIT-F-D


Memory Micron Technology EDB1316BDBH-1DIT-F-D Overview

The Memory Micron Technology EDB1316BDBH-1DIT-F-D DRAM IC is a high-performance, 1 Gbit memory module designed for advanced electronic applications. Manufactured by Micron Technology, this device features a parallel interface and is housed in a compact 134VFBGA package, making it ideal for space-constrained applications while offering robust data storage capabilities. This DRAM IC is tailored to meet the stringent demands of high-volume, memory-intensive applications, providing reliable and efficient performance across a variety of settings.

EDB1316BDBH-1DIT-F-D Features

This DRAM IC boasts several key features that make it a leading choice for developers and manufacturers:

  • 1 Gbit density – ample storage for complex processes and data-intensive applications.
  • Parallel interface – ensures fast data transfer rates and efficient communication with other hardware components.
  • 134VFBGA package – offers a compact footprint for designs where space is at a premium.
  • High reliability and durability – suitable for both commercial and industrial applications.

EDB1316BDBH-1DIT-F-D Applications

  • Consumer Electronics: Utilized in smartphones, tablets, and gaming consoles to manage processes and store data efficiently.
  • Automotive Systems: Employs high-speed data processing capabilities necessary for advanced driver-assistance systems (ADAS) and in-car entertainment systems.
  • Industrial Automation: Facilitates complex computations and robust data management in industrial control systems.
  • Networking: Critical in routers and switches for buffering and traffic management tasks to enhance network efficiency.
  • Smart Home Devices: Supports the functionality in smart appliances, enhancing user experiences with high-speed memory operations.
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