EDB1316BDBH-1DAUT-F-R TR
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- Mfr.Part #
- EDB1316BDBH-1DAUT-F-R TR
- Manufacturer
- Micron Technology
- Package / Case
- 134-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 134VFBGA
- Stock
- 15,402
- In Stock ：
- 15,402
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Voltage - Supply :
- 1.14V~1.95V
- Package / Case :
- 134-VFBGA
- Access Mode :
- SINGLE BANK PAGE BURST
- Number of Ports :
- 1
- Supply Voltage-Min (Vsup) :
- 1.7V
- Memory Interface :
- Parallel
- Operating Mode :
- SYNCHRONOUS
- Memory Format :
- DRAM
- Height Seated (Max) :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage-Max (Vsup) :
- 1.95V
- Surface Mount :
- yes
- Memory Type :
- Volatile
- Memory Width :
- 16
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Organization :
- 64MX16
- Memory Size :
- 1Gb 64M x 16
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 134
- Supply Voltage :
- 1.8V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 11.5mm
- Terminal Position :
- BOTTOM
- Width :
- 10mm
- Terminal Pitch :
- 0.65mm
- Operating Temperature :
- -40°C~125°C TC
- JESD-30 Code :
- R-PBGA-B134
- Memory Density :
- 1073741824 bit
- Clock Frequency :
- 533MHz
- Number of Functions :
- 1
- Datasheets
- EDB1316BDBH-1DAUT-F-R TR
Memory Micron Technology EDB1316BDBH-1DAUT-F-R TR Overview
The Memory Micron Technology EDB1316BDBH-1DAUT-F-R TR is an advanced DRAM module designed by Micron Technology, showcasing their expertise in memory solutions. This integrated circuit is tailored for high-performance applications requiring substantial data bandwidth and lower latency. With a storage capacity of 1 Gbit and housed in a 134VFBGA package, it ensures optimal density for compact designs. The use of parallel interface technology facilitates rapid data transfer rates, making it an essential component for sophisticated electronic systems that demand robust, scalable memory architectures. Its reliability and high-speed operation make it a premium choice for manufacturers looking to enhance system performance while maintaining energy efficiency.
EDB1316BDBH-1DAUT-F-R TR Features
The EDB1316BDBH-1DAUT-F-R TR DRAM by Micron Technology is equipped with numerous features that stand out in the competitive field of memory components. It provides a large 1GBit capacity, optimized for systems requiring substantial memory. The 134VFBGA package is precisely designed to minimize space usage while maximizing functionality in dense board layouts. Additionally, the parallel interface ensures compatibility with a wide range of existing technologies, enhancing its utility across diverse platforms.
EDB1316BDBH-1DAUT-F-R TR Applications
- Consumer Electronics: Utilized in devices such as smartphones and tablets to manage multiple applications simultaneously, ensuring smooth operation and user experience.
- Computing: Key component in personal computers and servers where large volumes of data processing and high-speed memory are critical for system performance.
- Automotive Systems: Incorporated in advanced driver-assistance systems (ADAS) to process real-time data, contributing to safer driving dynamics.
- Industrial Automation: Applied in machinery and control systems requiring rapid access to data to enhance operational efficiency and reliability in harsh environments.
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