ECF840AAACN-C1-Y3
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- Mfr.Part #
- ECF840AAACN-C1-Y3
- Manufacturer
- Micron Technology
- Package / Case
- Datasheet
- Download
- Description
- IC DRAM 8GBIT PARALLEL
- Stock
- 28,115
- In Stock ：
- 28,115
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Interface :
- Parallel
- RoHS Status :
- ROHS3 Compliant
- Memory Size :
- 8Gb 512M x 16
- Voltage - Supply :
- 1.14V~1.95V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Type :
- Volatile
- Packaging :
- Bulk
- Memory Format :
- DRAM
- Datasheets
- ECF840AAACN-C1-Y3
Memory IC
ECF840AAACN-C1-Y3 Overview
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Bulk case as well. On the chip, there is an 8Gb 512M x 16 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. The device is capable of handling a supply voltage of 1.14V~1.95V volts.
ECF840AAACN-C1-Y3 Features
ECF840AAACN-C1-Y3 Applications
There are a lot of Micron Technology Inc.
ECF840AAACN-C1-Y3 Memory applications.
- supercomputers
- telecommunications
- workstations,
- DVD disk buffer
- data buffer
- nonvolatile BIOS memory
- Camcorders
- embedded logic
- eDRAM
- graphics card
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| ECF840AAACN-C2-Y3 | Micron Technology | 41,057 | IC DRAM 8GBIT PARALLEL |
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