DZT3150-13

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Mfr.Part #
DZT3150-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 25V 5A SOT223-3
Stock
9,173
In Stock :
9,173

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
Polarity/Channel Type :
NPN
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Transition Frequency :
150MHz
Current - Collector Cutoff (Max) :
1μA ICBO
Radiation Hardening :
No
Number of Elements :
1
Lead Free :
Lead Free
ECCN Code :
EAR99
Max Collector Current :
5A
Collector Emitter Saturation Voltage :
500mV
Collector Emitter Breakdown Voltage :
25V
Packaging :
Tape and Reel (TR)
Factory Lead Time :
19 Weeks
Base Part Number :
DZT3150
Pbfree Code :
yes
Published :
2007
Mounting Type :
Surface Mount
Gain Bandwidth Product :
150MHz
Case Connection :
COLLECTOR
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 4A
Terminal Finish :
Matte Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Package / Case :
TO-261-4, TO-261AA
Width :
3.7mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 500mA 2V
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
1W
Weight :
7.994566mg
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
40
hFE Min :
50
Continuous Collector Current :
5A
Transistor Element Material :
SILICON
Number of Terminations :
4
Number of Pins :
4
Peak Reflow Temperature (Cel) :
260
Max Breakdown Voltage :
25V
Terminal Position :
Dual
Collector Emitter Voltage (VCEO) :
25V
Transistor Type :
NPN
Emitter Base Voltage (VEBO) :
7V
Frequency :
150MHz
Height :
1.65mm
Mount :
Surface Mount
Collector Base Voltage (VCBO) :
50V
Length :
6.7mm
Pin Count :
4
Power Dissipation :
3W
Datasheets
DZT3150-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT3150-13 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:DZT3150, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Number of Pins:4, DZT3150-13 pinout, DZT3150-13 datasheet PDF, DZT3150-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT3150-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DZT3150-13


NPN -55°C~150°C TJ 1μA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

DZT3150-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 5A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 5A volts.

DZT3150-13 Features


the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz


DZT3150-13 Applications


There are a lot of Diodes Incorporated
DZT3150-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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