DZT3150-13
- Mfr.Part #
- DZT3150-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A SOT223-3
- Stock
- 9,173
- In Stock :
- 9,173
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transition Frequency :
- 150MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Collector Current :
- 5A
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 25V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 19 Weeks
- Base Part Number :
- DZT3150
- Pbfree Code :
- yes
- Published :
- 2007
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 150MHz
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 4A
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Width :
- 3.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1W
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 50
- Continuous Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 25V
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 25V
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Frequency :
- 150MHz
- Height :
- 1.65mm
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Length :
- 6.7mm
- Pin Count :
- 4
- Power Dissipation :
- 3W
- Datasheets
- DZT3150-13

NPN -55°C~150°C TJ 1μA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DZT3150-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 5A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 5A volts.
DZT3150-13 Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
DZT3150-13 Applications
There are a lot of Diodes Incorporated
DZT3150-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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