DS3050W-100#

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Mfr.Part #
DS3050W-100#
Manufacturer
Analog Devices, Inc.
Package / Case
256-BGA
Datasheet
Download
Description
IC NVSRAM 4MBIT PARALLEL 256BGA
Stock
30,460
In Stock :
30,460

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Manufacturer :
Analog Devices, Inc.
Product Category :
Memory
Access Time (Max) :
100 ns
Supply Voltage-Max (Vsup) :
3.6V
Memory Type :
Non-Volatile
Memory Size :
4Mb 512K x 8
Terminal Position :
BOTTOM
Height Seated (Max) :
8.72mm
Base Part Number :
DS3050W
Pin Count :
256
Operating Mode :
ASYNCHRONOUS
Reach Compliance Code :
not_compliant
Memory Density :
4194304 bit
Memory Width :
8
Mounting Type :
Surface Mount
Operating Temperature :
-40°C~85°C TA
Supply Voltage :
3.3V
Number of Terminations :
256
Packaging :
Tray
Terminal Pitch :
1.27mm
Supply Voltage-Min (Vsup) :
3V
Width :
27mm
Terminal Finish :
TIN SILVER COPPER
JESD-609 Code :
e1
Memory Format :
NVSRAM
Organization :
512KX8
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
30
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
HTS Code :
8542.32.00.41
Memory Interface :
Parallel
Package / Case :
256-BGA
Length :
27mm
Moisture Sensitivity Level (MSL) :
5 (48 Hours)
Qualification Status :
Not Qualified
Write Cycle Time - Word, Page :
100ns
Number of Functions :
1
ECCN Code :
3A991.B.2.A
Published :
2006
JESD-30 Code :
S-PBGA-B256
Peak Reflow Temperature (Cel) :
245
Voltage - Supply :
3V~3.6V
Datasheets
DS3050W-100#
Introducing Memory Analog Devices, Inc. DS3050W-100# from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:DS3050W, Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TA, Number of Terminations:256, Package / Case:256-BGA, DS3050W-100# pinout, DS3050W-100# datasheet PDF, DS3050W-100# amp .Beyond Memory Analog Devices, Inc. DS3050W-100# ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. DS3050W-100#


Memory Analog Devices, Inc. DS3050W-100# Overview

The Memory Analog Devices, Inc. DS3050W-100# is a high-performance, non-volatile SRAM (NVSRAM) with a robust storage capacity of 4 Mbit, integrated in a compact 256-BGA (Ball Grid Array) package. This advanced memory solution ensures data retention while providing fast parallel access, making it an ideal choice for sophisticated electronic systems that require reliable and speedy data storage. Designed to offer both durability and flexibility, the DS3050W-100# features a wide voltage range and is perfectly suited for demanding applications across various industries.

DS3050W-100# Features

This NVSRAM component boasts several key features that enhance its utility and efficiency in complex electronic environments. These include a 4 Mbit capacity, parallel interface for swift data access, and a compact 256-BGA package that ensures a minimal footprint on system boards. The device's high data integrity and power-failure non-volatility safeguard critical data, making it highly reliable in applications where data security is paramount.

DS3050W-100# Applications

  • Data Logging Systems: Utilized for capturing and storing large volumes of data reliably, making it ideal for use in environments such as manufacturing and scientific research where data loss prevention is crucial.
  • Industrial Automation: Serves as a robust memory component in complex automation systems, providing fast access to data that facilitates real-time processing and control.
  • Medical Equipment: Applied in medical devices that require non-volatile memory to store critical patient data and operational parameters securely.
  • Telecommunications: Used in telecommunications equipment for storing configuration data and maintaining system stability even after power outages.
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