DS1330YP-70IND
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- Mfr.Part #
- DS1330YP-70IND
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 34-PowerCap™ Module
- Datasheet
- Download
- Description
- IC NVSRAM 256KBIT PAR 34PWRCAP
- Stock
- 35,493
- In Stock ：
- 35,493
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Memory
- Organization :
- 32KX8
- JESD-609 Code :
- e3
- Operating Mode :
- ASYNCHRONOUS
- Memory Size :
- 256Kb 32K x 8
- Package / Case :
- 34-PowerCap™ Module
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 245
- Pbfree Code :
- yes
- HTS Code :
- 8473.30.11.40
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Functions :
- 1
- Memory Interface :
- Parallel
- Memory Density :
- 262144 bit
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C~85°C TA
- Write Cycle Time - Word, Page :
- 70ns
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Qualification Status :
- Not Qualified
- Memory Format :
- NVSRAM
- Supply Voltage-Max (Vsup) :
- 5.5V
- Standby Current-Max :
- 0.00015A
- Memory Width :
- 8
- Pin Count :
- 34
- Supply Voltage-Min (Vsup) :
- 4.5V
- Supply Voltage :
- 5V
- Access Time (Max) :
- 70 ns
- Supply Current-Max :
- 0.085mA
- Memory Type :
- Non-Volatile
- Base Part Number :
- DS1330Y
- Published :
- 2010
- Power Supplies :
- 5V
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Number of Terminations :
- 34
- Voltage - Supply :
- 4.5V~5.5V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-XDMA-U34
- Datasheets
- DS1330YP-70IND
Memory Analog Devices, Inc. DS1330YP-70IND Overview
The DS1330YP-70IND by Analog Devices, Inc. is a cutting-edge non-volatile SRAM (NVSRAM) with a capacity of 256 Kbits. This high-performance integrated circuit is encased in a 34-pin PowerCap package, ensuring robust reliability and enhanced data retention capabilities. The incorporation of non-volatile elements within the SRAM structure allows for quick access to data, while also maintaining the integrity of the data in the absence of power. This makes the Memory Analog Devices, Inc. DS1330YP-70IND an ideal solution for demanding industrial applications where data persistence and speed are crucial.
DS1330YP-70IND Features
This NVSRAM device offers a parallel interface for high-speed data transfer and low-power operations. The design integrates an automatic power-fail chip deselect and write-protection feature, enhancing the reliability in volatile conditions. Operating within the industrial temperature range of -40°C to +85°C, it provides a durable choice for harsh environments. Additionally, its built-in PowerCap technology provides a stable backup energy source, securing data retention even during unexpected power outages.
DS1330YP-70IND Applications
- Industrial Automation: In automated production lines, this NVSRAM can be used for storing critical process data rapidly and securely, ensuring operational continuity and quick recovery from power failures.
- Medical Devices: Reliability and data integrity are crucial in medical equipment. The DS1330YP-70IND ensures data such as patient records and device configuration settings are preserved safely across power cycles.
- Telecommunications: Utilized in communication infrastructure to maintain network configuration data, facilitating quick restoration and minimal downtime in case of power disruption.
- Automotive Electronics: It can function as a reliable storage medium in automotive environments, where data on sensor readings and system status need to be retained accurately for vehicle diagnostics and performance monitoring.
- Military and Aerospace: Suitable for applications where data must be kept secure and uncorrupted through extreme conditions and abrupt power losses.
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