DS1270Y-100#

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Mfr.Part #
DS1270Y-100#
Manufacturer
Analog Devices, Inc.
Package / Case
36-DIP Module (0.600, 15.24mm)
Datasheet
Download
Description
IC NVSRAM 16MBIT PARALLEL 36EDIP
Stock
16,582
In Stock :
16,582

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Manufacturer :
Analog Devices, Inc.
Product Category :
Memory
Memory Format :
NVSRAM
JESD-609 Code :
e0
Pbfree Code :
No
Access Time (Max) :
100 ns
Radiation Hardening :
No
ECCN Code :
3A991.B.2.A
HTS Code :
8473.30.11.40
Data Bus Width :
8B
Pin Count :
36
Organization :
2MX8
Mounting Type :
Through Hole
Memory Interface :
Parallel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
5 YEAR DATA RETENTION
Write Cycle Time - Word, Page :
100ns
Memory Size :
16Mb 2M x 8
Supply Voltage :
5V
Lead Free :
Contains Lead
Memory Width :
8
Published :
2006
Packaging :
Tube
Peak Reflow Temperature (Cel) :
240
Terminal Position :
Dual
Frequency :
100GHz
Terminal Finish :
TIN LEAD
Voltage - Supply :
4.5V~5.5V
Package / Case :
36-DIP Module (0.600, 15.24mm)
Surface Mount :
No
Number of Terminations :
36
Number of Pins :
36
Base Part Number :
DS1270Y
RoHS Status :
Non-RoHS Compliant
Number of Functions :
1
Operating Supply Voltage :
5V
Operating Temperature :
0°C~70°C TA
Memory Type :
Non-Volatile
Density :
16 Mb
Datasheets
DS1270Y-100#
Introducing Memory Analog Devices, Inc. DS1270Y-100# from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:36-DIP Module (0.600, 15.24mm), Number of Terminations:36, Number of Pins:36, Base Part Number:DS1270Y, Operating Temperature:0°C~70°C TA, DS1270Y-100# pinout, DS1270Y-100# datasheet PDF, DS1270Y-100# amp .Beyond Memory Analog Devices, Inc. DS1270Y-100# ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. DS1270Y-100#


Memory Analog Devices, Inc. DS1270Y-100# Overview

The DS1270Y-100# by Analog Devices, Inc. is a high-capacity Non-Volatile SRAM (NVSRAM) component designed for demanding applications requiring fast access and high reliability. With a robust 16Mbit capacity, this memory solution operates on a parallel interface, ensuring efficient data handling and quick retrieval speeds. Encased in a 36-pin EDIP (Extended Dual In-line Package), the DS1270Y-100# is built for durability and performance, making it an ideal choice for critical data storage that demands uninterruptible power supply conditions.

DS1270Y-100# Features

This NVSRAM unit offers rapid parallel access, robust environmental tolerance, and a substantial 16MB of memory. The integrated hardware and software features ensure data integrity with automatic data recall upon power restoration, further solidifying its role in applications requiring faultless non-volatile memory storage.

DS1270Y-100# Applications

  • Industrial Automation: Used in complex machinery for real-time logging and data retention even in the event of sudden power outages.
  • Medical Devices: Ensures patient data integrity and device configuration settings are maintained without corruption over power cycles.
  • Telecommunication Infrastructure: Provides consistent, reliable data storage for network hardware that requires high availability and resilience.
  • Automotive Electronics: Supports critical memory functions in automotive systems that need to operate reliably in varying environmental conditions.
  • Military and Aerospace: Ideal for applications demanding rugged, secure data storage solutions that can withstand extreme conditions.
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