DS1270W-100IND

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Mfr.Part #
DS1270W-100IND
Manufacturer
Analog Devices, Inc.
Package / Case
36-DIP Module (0.600, 15.24mm)
Datasheet
Download
Description
IC NVSRAM 16MBIT PARALLEL 36EDIP
Stock
35,661
In Stock :
35,661

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Manufacturer :
Analog Devices, Inc.
Product Category :
Memory
Qualification Status :
Not Qualified
Write Cycle Time - Word, Page :
100ns
Mounting Type :
Through Hole
Access Time (Max) :
100 ns
Lead Free :
Contains Lead
JESD-30 Code :
R-XDMA-P36
Base Part Number :
DS1270W
Supply Voltage-Min (Vsup) :
3V
HTS Code :
8473.30.11.40
Voltage - Supply :
3V~3.6V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supply Voltage :
3.3V
ECCN Code :
3A991.B.2.A
Memory Type :
Non-Volatile
Terminal Position :
Dual
Organization :
2MX8
Operating Temperature :
-40°C~85°C TA
Memory Format :
NVSRAM
JESD-609 Code :
e0
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Memory Size :
16Mb 2M x 8
Memory Interface :
Parallel
Packaging :
Tube
Number of Functions :
1
Published :
2010
Pbfree Code :
No
Operating Mode :
ASYNCHRONOUS
Terminal Finish :
TIN LEAD
Number of Terminations :
36
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
36
Memory Density :
16777216 bit
RoHS Status :
Non-RoHS Compliant
Supply Voltage-Max (Vsup) :
3.6V
Package / Case :
36-DIP Module (0.600, 15.24mm)
Memory Width :
8
Datasheets
DS1270W-100IND
Introducing Memory Analog Devices, Inc. DS1270W-100IND from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:DS1270W, Operating Temperature:-40°C~85°C TA, Number of Terminations:36, Package / Case:36-DIP Module (0.600, 15.24mm), DS1270W-100IND pinout, DS1270W-100IND datasheet PDF, DS1270W-100IND amp .Beyond Memory Analog Devices, Inc. DS1270W-100IND ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. DS1270W-100IND


Memory Analog Devices, Inc. DS1270W-100IND Overview

Analog Devices, Inc. presents the DS1270W-100IND, a high-performance NVSRAM integrated circuit designed to cater to the demands of modern electronic systems. This 16MBIT parallel 36EDIP device combines the non-volatile features of EEPROM with the high-speed operation of static RAM. With its parallel interface and 36-pin EDIP package, it offers seamless integration into various applications requiring reliable data storage and retrieval.

Designed with cutting-edge technology, this NVSRAM ensures data integrity during power interruptions, making it ideal for critical industrial, automotive, and medical applications where uninterrupted operation is paramount. Its robust architecture and wide operating temperature range further enhance its suitability for harsh environments.

DS1270W-100IND Features

  • Non-volatile static RAM (NVSRAM) integration
  • 16MBIT storage capacity
  • Parallel interface for efficient data transfer
  • 36-pin EDIP package for easy integration
  • High-speed operation for quick access
  • Data retention during power loss
  • Wide operating temperature range
  • Robust design for reliability

DS1270W-100IND Applications

  • Industrial Automation: The DS1270W-100IND ensures uninterrupted data storage in industrial automation systems, safeguarding critical information during power outages and system failures.
  • Automotive Electronics: Integrated into automotive control units, this NVSRAM device provides reliable data backup, enhancing the safety and performance of automotive systems.
  • Medical Devices: In medical equipment such as patient monitors and diagnostic devices, the DS1270W-100IND ensures the integrity of patient data, even in emergency situations where power supply may be compromised.
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