DS1258Y-100#

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Mfr.Part #
DS1258Y-100#
Manufacturer
Analog Devices, Inc.
Package / Case
40-DIP Module (0.610, 15.495mm)
Datasheet
Download
Description
IC NVSRAM 2MBIT PARALLEL 40EDIP
Stock
14,328
In Stock :
14,328

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Manufacturer :
Analog Devices, Inc.
Product Category :
Memory
RoHS Status :
Non-RoHS Compliant
Memory Size :
2Mb 128K x 16
Supply Voltage :
5V
Organization :
128KX16
Operating Supply Voltage :
5V
Published :
2006
Pin Count :
40
Package / Case :
40-DIP Module (0.610, 15.495mm)
Terminal Finish :
Tin/Lead (Sn/Pb)
Power Supplies :
5V
Density :
2 Mb
Surface Mount :
No
JESD-609 Code :
e0
Voltage - Supply :
4.5V~5.5V
Supply Current-Max :
0.17mA
Data Bus Width :
16b
Radiation Hardening :
No
Additional Feature :
10 YEAR DATA RETENTION
Memory Format :
NVSRAM
Operating Temperature :
0°C~70°C TA
ECCN Code :
3A991.B.2.A
Packaging :
Tube
Terminal Position :
Dual
Lead Free :
Contains Lead
Terminal Pitch :
2.54mm
Base Part Number :
DS1258Y
Number of Terminations :
40
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
HTS Code :
8542.32.00.41
Standby Current-Max :
0.01A
Memory Interface :
Parallel
Memory Width :
16
Memory Type :
Non-Volatile
Write Cycle Time - Word, Page :
100ns
Mounting Type :
Through Hole
Number of Pins :
40
Access Time (Max) :
100 ns
Number of Functions :
1
Pbfree Code :
No
Datasheets
DS1258Y-100#
Introducing Memory Analog Devices, Inc. DS1258Y-100# from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:40-DIP Module (0.610, 15.495mm), Operating Temperature:0°C~70°C TA, Base Part Number:DS1258Y, Number of Terminations:40, Mounting Type:Through Hole, Number of Pins:40, DS1258Y-100# pinout, DS1258Y-100# datasheet PDF, DS1258Y-100# amp .Beyond Memory Analog Devices, Inc. DS1258Y-100# ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. DS1258Y-100#


Memory Analog Devices, Inc. DS1258Y-100# Overview

The DS1258Y-100# by Analog Devices, Inc. is a high-performance, non-volatile SRAM (NVSRAM) device offering a substantial 2Mbit storage capacity. Engineered for reliability and speed, it integrates seamlessly into a broad range of high-demand applications. Its 40-pin EDIP (Extended Dual In-line Package) ensures robust physical packaging and ease of integration into system designs. This NVSRAM unit is designed to retain data when power is removed, with the aid of an embedded battery. The Memory Analog Devices, Inc. DS1258Y-100# stands out for its combination of durability, data integrity, and low-power consumption, making it an ideal choice for sophisticated electronic systems requiring frequent or rapid access to large volumes of data.

DS1258Y-100# Features

This 2Mbit parallel NVSRAM features several key attributes that make it highly advantageous for use in critical data storage applications. These include an extended temperature range, ensuring operational stability in varying environmental conditions, and a fast access time, facilitating quick data retrieval and storage. The device's robust design includes hardware and software write protection, enhancing security and data integrity. Additionally, its low power consumption during operation makes it an economical choice for energy-efficient designs.

DS1258Y-100# Applications

  • Industrial Automation Systems: Integrates into control systems for data logging and real-time critical process monitoring, ensuring data is immediately accessible after power disruptions.
  • Telecommunications: Used in network infrastructure to store configuration and state information, allowing quick recovery and initialization upon system reboot or power failure.
  • Automotive Electronics: Provides reliable data storage for advanced driver-assistance systems (ADAS), ensuring settings and last-state data are preserved between vehicle startups.
  • Medical Equipment: Employs in critical medical monitoring and diagnostic devices, where preservation of operational parameters and patient data is crucial for device reliability and patient safety.
  • Military and Aerospace: Suitable for use in systems requiring ruggedized, fail-safe memory storage that can withstand extreme environmental conditions and abrupt power losses.
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