DS1250W-100IND

Manufacturer :

Analog Devices, Inc.

Product Category :

Memory

Write Cycle Time - Word, Page :

100ns

Supply Current-Max :

0.05mA

JESD-609 Code :

e3

Factory Lead Time :

9 Weeks

Memory Size :

4Mb 512K x 8

Memory Density :

4194304 bit

Standby Current-Max :

0.00025A

Voltage - Supply :

3V~3.6V

Memory Type :

Non-Volatile

Power Supplies :

3.3V

Terminal Pitch :

2.54mm

Number of Terminations :

32

Operating Temperature :

-40°C~85°C TA

Access Time (Max) :

100 ns

Organization :

512KX8

Terminal Finish :

MATTE TIN

Number of Functions :

1

Packaging :

Tube

Memory Interface :

Parallel

Supply Voltage :

3.3V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

32

Published :

2004

Surface Mount :

No

Memory Width :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Supply Voltage-Min (Vsup) :

3V

Package / Case :

32-DIP Module (0.600, 15.24mm)

Supply Voltage-Max (Vsup) :

3.6V

Operating Mode :

ASYNCHRONOUS

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Base Part Number :

DS1250W

Memory Format :

NVSRAM

HTS Code :

8473.30.11.40

Pbfree Code :

yes

ECCN Code :

3A991.B.2.A

JESD-30 Code :

R-XDMA-P32