DS1230Y-200IND+
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- Mfr.Part #
- DS1230Y-200IND+
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 28-DIP Module (0.600, 15.24mm)
- Datasheet
- Download
- Description
- IC NVSRAM 256KBIT PAR 28EDIP
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Memory
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Supply Voltage-Min (Vsup) :
- 4.5V
- Memory Size :
- 256Kb 32K x 8
- Standby Current-Max :
- 0.005A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supply Voltage-Max (Vsup) :
- 5.5V
- Base Part Number :
- DS1230Y
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~85°C TA
- HTS Code :
- 8473.30.11.40
- Operating Mode :
- ASYNCHRONOUS
- ECCN Code :
- EAR99
- Voltage - Supply :
- 4.5V~5.5V
- Terminal Pitch :
- 2.54mm
- Package / Case :
- 28-DIP Module (0.600, 15.24mm)
- Reach Compliance Code :
- not_compliant
- Memory Density :
- 262144 bit
- Memory Type :
- Non-Volatile
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 28
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Memory Interface :
- Parallel
- Surface Mount :
- No
- Power Supplies :
- 5V
- Factory Lead Time :
- 13 Weeks
- Number of Functions :
- 1
- Packaging :
- Tube
- Memory Width :
- 8
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Write Cycle Time - Word, Page :
- 200ns
- Organization :
- 32KX8
- Access Time (Max) :
- 200 ns
- Supply Voltage :
- 5V
- Published :
- 2002
- Number of Pins :
- 28
- Pin Count :
- 28
- RoHS Status :
- ROHS3 Compliant
- Supply Current-Max :
- 0.085mA
- Memory Format :
- NVSRAM
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Datasheets
- DS1230Y-200IND+
Memory Analog Devices, Inc. DS1230Y-200IND+ Overview
The Memory Analog Devices, Inc. DS1230Y-200IND+ is a high-performance non-volatile static RAM (NVSRAM) designed to deliver reliable and durable storage solutions. With a capacity of 256 Kbit and packaged in a robust 28-pin EDIP, this IC is engineered for applications demanding high-speed data retention and low power consumption. Its ability to preserve data without an external power source, courtesy of the onboard battery, makes it exceptionally suited for critical data storage applications across various industrial sectors. The integration of non-volatile elements with volatile RAM offers the best of both worlds, ensuring data integrity and quick access simultaneously.
DS1230Y-200IND+ Features
This IC features a parallel interface, providing ease of integration with existing architectures and fast data access rates. It operates over an industrial temperature range, making it suitable for use in environments subject to extreme conditions. The DS1230Y-200IND+ ensures data integrity through automatic recall on power-up, which loads data from non-volatile storage into volatile memory, simplifying system design concerning data recovery and security.
DS1230Y-200IND+ Applications
- Industrial Automation: Employed in control systems that require frequent and rapid access to data which must not be lost in case of a power outage.
- Medical Equipment: Used in critical medical monitoring systems where data retention and accuracy are paramount for patient care continuity.
- Telecommunications: Integral in telecom systems for maintaining session data crucial during system reboots or power failures.
- Military and Aerospace: Suitable for applications requiring rugged memory solutions that can endure extreme environmental conditions and preserve mission-critical data integrity.
- Consumer Electronics: Utilized in devices like set-top boxes and gaming consoles where quick recovery of data is necessary for user settings and game progress preservation post-power cycle.
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