DS1230Y-120
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- Mfr.Part #
- DS1230Y-120
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 28-DIP Module (0.600, 15.24mm)
- Datasheet
- Download
- Description
- IC NVSRAM 256KBIT PAR 28EDIP
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Memory
- Memory Interface :
- Parallel
- Organization :
- 32KX8
- Terminal Pitch :
- 2.54mm
- Memory Format :
- NVSRAM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- 28-DIP Module (0.600, 15.24mm)
- Reach Compliance Code :
- not_compliant
- Published :
- 2002
- Packaging :
- Tube
- Base Part Number :
- DS1230Y
- Supply Current-Max :
- 0.085mA
- Pin Count :
- 28
- Operating Temperature :
- 0°C~70°C TA
- Voltage - Supply :
- 4.5V~5.5V
- Terminal Finish :
- Matte Tin (Sn)
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Access Time (Max) :
- 120 ns
- Power Supplies :
- 5V
- Surface Mount :
- No
- Operating Mode :
- ASYNCHRONOUS
- Number of Terminations :
- 28
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Memory Width :
- 8
- Number of Functions :
- 1
- Standby Current-Max :
- 0.0006A
- Supply Voltage-Min (Vsup) :
- 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supply Voltage-Max (Vsup) :
- 5.5V
- Write Cycle Time - Word, Page :
- 120ns
- Memory Size :
- 256Kb 32K x 8
- Supply Voltage :
- 5V
- Memory Density :
- 262144 bit
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8473.30.11.40
- Number of Pins :
- 28
- Memory Type :
- Non-Volatile
- Datasheets
- DS1230Y-120
Memory Analog Devices, Inc. DS1230Y-120 Overview
The Memory Analog Devices, Inc. DS1230Y-120 is a high-performance, non-volatile static RAM (NVSRAM) device that combines the best of both worlds: the speed of static RAM and the permanence of non-volatile memory. This IC NVSRAM unit boasts a capacity of 256KBIT and is housed in a robust 28EDIP package, making it ideal for applications requiring fast access and reliability under harsh conditions. Its design is optimized for high integration which allows for enhanced system reliability through automatic store on power loss without the need for an external battery.
DS1230Y-120 Features
- 256Kbit of non-volatile static RAM
- Access time of 120 ns
- Automatic power-fail chip deselect and write protection
- 28-pin EDIP package for easy integration into existing designs
- 10 years of data retention in the absence of power
- Unlimited write cycles, providing robust read/write capabilities
DS1230Y-120 Applications
- Industrial automation systems: Used to retain critical data such as process states and system parameters, ensuring fast recovery and continued operations after any power disruptions.
- Telecommunication infrastructure: Maintains configuration data and system state information, allowing for quick restoration of services without data loss post power failure.
- Medical monitoring equipment: Ensures the reliability of critical patient data storage, allowing devices to retain important diagnostic information during power outages.
- Automotive electronics: Provides dependable memory solutions for advanced driver-assistance systems (ADAS) and other in-vehicle systems that require data persistence after the engine is turned off.
- Point of Sale (POS) systems: Helps maintain transaction and inventory data securely and reliably, minimizing downtime and data inconsistencies after unexpected shutdowns.
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