DS1230W-100IND
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- Mfr.Part #
- DS1230W-100IND
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 28-DIP Module (0.600, 15.24mm)
- Datasheet
- Download
- Description
- IC NVSRAM 256KBIT PAR 28EDIP
- Stock
- 13,530
- In Stock ：
- 13,530
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Memory
- Terminal Finish :
- MATTE TIN
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Operating Mode :
- ASYNCHRONOUS
- Access Time (Max) :
- 100 ns
- Supply Voltage-Max (Vsup) :
- 3.6V
- Length :
- 38.225mm
- Supply Voltage :
- 3.3V
- Base Part Number :
- DS1230W
- Terminal Position :
- Dual
- Package / Case :
- 28-DIP Module (0.600, 15.24mm)
- Height Seated (Max) :
- 10.668mm
- Number of Functions :
- 1
- Terminal Pitch :
- 2.54mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Organization :
- 256KX8
- Voltage - Supply :
- 3V~3.6V
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 28
- Pin Count :
- 28
- HTS Code :
- 8473.30.11.40
- Published :
- 2004
- Memory Size :
- 256Kb 32K x 8
- Memory Density :
- 2097152 bit
- Memory Interface :
- Parallel
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Pbfree Code :
- yes
- Memory Type :
- Non-Volatile
- Write Cycle Time - Word, Page :
- 100ns
- Width :
- 15.24mm
- Supply Current-Max :
- 0.05mA
- Power Supplies :
- 3.3V
- RoHS Status :
- ROHS3 Compliant
- Memory Format :
- NVSRAM
- JESD-30 Code :
- R-PDIP-T28
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Standby Current-Max :
- 0.00025A
- Memory Width :
- 8
- Supply Voltage-Min (Vsup) :
- 3V
- Operating Temperature :
- -40°C~85°C TA
- Additional Feature :
- 10 YEAR DATA RETENTION
- Datasheets
- DS1230W-100IND
Memory Analog Devices, Inc. DS1230W-100IND Overview
The DS1230W-100IND by Analog Devices, Inc. is a high-performance Non-Volatile SRAM (NVSRAM) that offers 256 Kbit of memory in a robust 28-pin EDIP package. This product is designed to provide reliable data retention while eliminating the complexities and overhead of battery backup required by traditional SRAMs. It features an integrated lithium battery and control circuit that ensures data is maintained in the absence of power, making it an ideal choice for critical data storage applications where the integrity of the data is paramount. The utilization of advanced technology in the Memory Analog Devices, Inc. DS1230W-100IND ensures lower power consumption and higher reliability, thereby enhancing system performance and reducing the total cost of ownership for businesses.
DS1230W-100IND Features
- 256 Kbit of non-volatile memory
- Parallel interface for fast data access
- Integrated power-fail deselect and battery switch circuitry
- 10-year minimum data retention in the absence of external power
- Operates in industrial temperature ranges (-40°C to +85°C)
- 28-pin EDIP package suitable for PCB mounting
DS1230W-100IND Applications
- Industrial Automation: Utilized in PLCs and control systems to retain critical program and system data during power losses.
- Telecommunications: Ensures data integrity for switching systems and network routers that require high reliability and fast access to backup configuration data.
- Medical Devices: Applied in medical monitoring systems where non-volatile memory is crucial for retaining patient data and device configuration securely.
- Transportation: Used in vehicle navigation and telemetry systems to preserve vital log and positional data in challenging environments.
- Military and Aerospace: Ideal for applications requiring rugged memory solutions that provide data stability and endurance under extreme conditions.
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